IS43LQ32512A-046BLI
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | ISSI (Integrated Silicon Solution, Inc.) | |
| JEDEC Compliance: | JESD209-4 / LPDDR4X | |
| ECC Support: | On-Die ECC | |
| Process Technology: | DRAM Process Technology (not publicly disclosed) | |
| Power Saving Features: | Deep Sleep, Clock Stop, Partial Array Self Refresh | |
| Bank Architecture: | 8 Banks per Channel × 2 Channels | |
| Refresh Mode: | Self Refresh / Auto Refresh | |
| Temperature Grade: | Industrial | |
| Pin/Ball Count: | 200-ball | |
| Package Size: | 10 mm × 14.5 mm | |
| VDD/VDDQ: | VDD1 1.70–1.95V; VDD2 1.06–1.17V; VDDQ 0.6V/1.1V | |
| Clock Frequency: | 2133 MHz | |
| Organization: | 512Mb ×16 ×2 Channels | |
| Density: | 16Gb | |
| Data Rate: | 4266 Mbps | |
| I/O Width: | x16 ×2 | |
| Package Type: | TFBGA | |
| Interface Standard: | LPDDR4X | |
| Operating Temperature Range: | -40°C to +95°C |

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