Nexperia
Results: 1
Brand
Switching Characteristics
Input Capacitance (Ciss)
Gate-Source Voltage (VGS)
Pulsed Drain Current (ID Pulse)
Continuous Drain Current (ID)
Drain-Source Voltage (VDS)
Operating Junction Temperature (TJ)
Gate Charge (Qg)
Power Dissipation (PD)
Transistor Type
Mounting Style
Process Technology
Product Category
Package Type
Product
| Image | Brand | Title | Package Type | Product Category | Process Technology | Mounting Style | Transistor Type | Power Dissipation (PD) | Gate Charge (Qg) | Operating Junction Temperature (TJ) | Drain-Source Voltage (VDS) | Continuous Drain Current (ID) | Pulsed Drain Current (ID Pulse) | Gate-Source Voltage (VGS) | Input Capacitance (Ciss) | Switching Characteristics |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Nexperia | BC817-25 | SOT-23 (TO-236AB) | Small Signal Transistor | Planar Epitaxial Silicon | Surface Mount | NPN Bipolar Transistor | 250mW | no information | 150°C Max | 45V (Collector-Emitter Voltage, VCEO) | 500mA | 1A (Pulse Collector Current) | no information | no information | High-Speed Switching BJT |





























































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