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Home Electronic ComponentsMemory ICsDRAMSamsung

Samsung

Results: 44
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Memory ICs
DRAM
Samsung
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Brand

Samsung Semiconductor

JEDEC Compliance

JEDEC DDR3 compliant
JEDEC DDR3L
JEDEC DDR4 compliant
JEDEC LPDDR4X compliant
JEDEC DDR4
JEDEC LPDDR5 compliant
JEDEC DDR5 compliant
JEDEC LPDDR5 + UFS 3.1 compliant
JEDEC LPDDR5X + UFS 3.1 compliant
JEDEC LPDDR5X compliant
GDDR6 JEDEC
JEDEC GDDR6 compliant
JESD209-4 LPDDR4
JEDEC Mobile DDR compliant

ECC Support

No
On-die ECC

Process Technology

1x nm Class
1x nm DRAM
2x nm DRAM
Samsung advanced LPDDR5 node
10nm-class DRAM
10nm-class mobile DRAM
Samsung 10nm-class LPDDR5 process
10nm-class graphics DRAM
Samsung 10nm-class DRAM process (E-die generation)
Samsung 12nm-class LPDDR5X process
12nm-class mobile DRAM process
14nm/12nm-class DRAM
20nm-class DRAM
30nm-class DRAM
30nm-class DRAM process
Mobile DRAM process
Samsung advanced DRAM node
Samsung advanced mobile DRAM node
Samsung mobile DRAM process

Power Saving Features

DVFS, Deep Sleep, Self Refresh
Deep Power Down, Self Refresh
Deep Sleep, DVFS, Self Refresh
Deep Sleep,Self Refresh
Low Power Modes, Dynamic Refresh
Partial Array Self Refresh (PASR), Deep Power Down
Power-Down Mode, Self Refresh, DLL-off Mode
Power-Down Mode, Self Refresh, Deep Power Saving
Power-Down, Self Refresh, DFE
Power-Down, Self Refresh, DLL-off
Power-Down, Self Refresh, Decision Feedback Equalization (DFE)
Self Refresh, PASR, Power-Down
Self Refresh, Power-Down Mode

Bank Architecture

Multi-bank LPDDR4X architecture
4 Banks
Multi-bank LPDDR5 architecture
Multi-bank LPDDR5X architecture
8 Banks
16 Banks / 4 Bank Groups
16 Banks
16 Banks / Bank Groups
32 Banks / 8 Bank Groups

Refresh Mode

Auto Refresh
Auto Refresh / Self Refresh
Auto Refresh,Self Refresh

Temperature Grade

Commercial
Commercial Grade

Pin/Ball Count

78 balls
90-ball class
96 balls
96-ball
180 balls
180-ball
200-ball class
200 Balls
297 balls

Package Size

8 × 14 mm
9 × 14 mm
9 × 8 × 1.2 mm
10×14.5 mm
14 × 12 mm
78-ball FBGA
96-ball FBGA
180-ball FBGA
297-FBGA class
297-FBGA package class
Mobile FBGA

VDD/VDDQ

VDD1=1.1V / VDDQ=0.6V
VDD1=1.05V / VDDQ=0.5V
VDD=1.1V / VDDQ=1.1V
1.1V / 1.1V
1.1V/1.1V
1.2V / 1.2V
1.2V
1.35V
1.35V / 1.5V
1.5V / 1.5V
VDD=1.5V ±0.075V / VDDQ=1.5V ±0.075V
1.8V / 1.05V / 0.5V
1.8V
1.8V / 1.05V / 0.9V / 0.5V

Clock Frequency

200 MHz
800 MHz
933 MHz
1066 MHz
1200 MHz
1333 MHz
1600 MHz
1750 MHz
1866 MHz
2000 MHz
2133 MHz
2750 MHz
2800 MHz
3200 MHz
3750 MHz
4266 MHz

Organization

1G ×16
1G ×8
1.5G ×8
2G ×8
LPDDR5 + UFS integrated
LPDDR5X + UFS integrated
32M ×16
128M ×16
192M ×32
256M ×16
256M x16
256M × 16
256M × 32
256M ×32
512M ×16
512M x16
512M × 16
512M ×8
768M ×8

Density

2Gb
4Gb
uMCP (LPDDR5 + UFS 3.1)
uMCP (LPDDR5X + UFS 3.1)
6Gb
8Gb
12Gb
16Gb
128Gb (uMCP total class)
512Mb

Data Rate

14 Gbps
16 Gb/s
400 Mbps
1600 Mbps
1866 Mbps
1866 MT/s
2133 Mbps
2400 Mbps
2666 Mbps
3200 Mbps
3200 MT/s
3733 Mbps
4266 Mbps
4266 MT/s
5500 Mbps
5600 Mbps
6400 Mbps
7500 Mbps
8533 Mbps

I/O Width

x8
x16
x32
x64
x64 (LPDDR5 DRAM bus)

Package Type

FBGA-200
FBGA
uMCP FBGA

Interface Standard

DDR3 SDRAM
DDR3L SDRAM
DDR4 SDRAM
LPDDR4X SDRAM
LPDDR4
LPDDR5 SDRAM
DDR5 SDRAM
LPDDR5 + UFS 3.1
LPDDR5X + UFS 3.1
LPDDR5X SDRAM
GDDR6 SDRAM
Mobile DDR SDRAM

Operating Temperature Range

0°C to +85°C
0°C to +95°C
0C to +95C
-25°C to +85°C

Product

Image Brand Title Operating Temperature Range Interface Standard Package Type I/O Width Data Rate Density Organization Clock Frequency VDD/VDDQ Package Size Pin/Ball Count Temperature Grade Refresh Mode Bank Architecture Power Saving Features Process Technology ECC Support JEDEC Compliance
Samsung Semiconductor K4ZAF325BC-SC16 0°C to +95°C GDDR6 SDRAM FBGA x32 16 Gb/s 8Gb 256M × 32 2000 MHz 1.35V 14 × 12 mm 180-ball Commercial Auto Refresh 16 Banks Deep Power Down, Self Refresh 10nm-class DRAM On-die ECC GDDR6 JEDEC
Samsung Semiconductor K4B4G1646E-BCNB000 0°C to +95°C DDR3L SDRAM FBGA x16 1866 MT/s 4Gb 256M × 16 933 MHz 1.35V / 1.5V 8 × 14 mm 96-ball Commercial Auto Refresh / Self Refresh 8 Banks Self Refresh, PASR, Power-Down 2x nm DRAM No JEDEC DDR3L
Samsung Semiconductor K4A8G165WG-BCWE 0°C to +95°C DDR4 SDRAM FBGA x16 3200 MT/s 8Gb 512M × 16 1600 MHz 1.2V 9 × 14 mm 96-ball Commercial Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Self Refresh, Power-Down Mode 1x nm DRAM No JEDEC DDR4
Samsung Semiconductor K4F8E3S4HB-MHCJ 0C to +95C LPDDR4 FBGA-200 x16 4266 MT/s 8Gb 512M x16 2133 MHz 1.1V/1.1V 10×14.5 mm 200 Balls Commercial Auto Refresh,Self Refresh 8 Banks Deep Sleep,Self Refresh 1x nm Class No JESD209-4 LPDDR4
Samsung Semiconductor K4B4G1646E-BCNB Samsung 0°C to +85°C DDR3 SDRAM FBGA x16 1866 Mbps 4Gb 256M x16 933 MHz VDD=1.5V ±0.075V / VDDQ=1.5V ±0.075V 96-ball FBGA 96 balls Commercial Auto Refresh / Self Refresh 8 Banks Power-Down Mode, Self Refresh, Deep Power Saving 30nm-class DRAM process No JEDEC DDR3 compliant
Samsung Semiconductor K4A4G165WG-BCWE Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 3200 Mbps 4Gb 256M ×16 1600 MHz 1.2V / 1.2V 9 × 8 × 1.2 mm 96-ball Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down Mode, Self Refresh, DLL-off Mode Samsung 10nm-class DRAM process (E-die generation) No JEDEC DDR4 compliant
Samsung Semiconductor K3LK5K50BM-BGCP Samsung -25°C to +85°C LPDDR5 + UFS 3.1 uMCP FBGA x64 (LPDDR5 DRAM bus) 6400 Mbps 128Gb (uMCP total class) LPDDR5 + UFS integrated 3200 MHz 1.8V / 1.05V / 0.9V / 0.5V 297-FBGA package class 297 balls Commercial Grade Auto Refresh / Self Refresh Multi-bank LPDDR5 architecture Deep Sleep, DVFS, Self Refresh Samsung 10nm-class LPDDR5 process No JEDEC LPDDR5 + UFS 3.1 compliant
Samsung Semiconductor K3LK6K60BM-BGCP Samsung -25°C to +85°C LPDDR5 + UFS 3.1 uMCP FBGA x64 6400 Mbps uMCP (LPDDR5 + UFS 3.1) LPDDR5 + UFS integrated 3200 MHz 1.8V / 1.05V / 0.5V 297-FBGA class 297 balls Commercial Grade Auto Refresh / Self Refresh Multi-bank LPDDR5 architecture DVFS, Deep Sleep, Self Refresh Samsung 10nm-class LPDDR5 process No JEDEC LPDDR5 + UFS 3.1 compliant
Samsung Semiconductor K3LK7K70BM-BGCP Samsung -25°C to +85°C LPDDR5 + UFS 3.1 uMCP FBGA x64 6400 Mbps uMCP (LPDDR5 + UFS 3.1) LPDDR5 + UFS integrated 3200 MHz 1.8V / 1.05V / 0.5V 297-FBGA class 297 balls Commercial Grade Auto Refresh / Self Refresh Multi-bank LPDDR5 architecture DVFS, Deep Sleep, Self Refresh Samsung 10nm-class LPDDR5 process No JEDEC LPDDR5 + UFS 3.1 compliant
Samsung Semiconductor K3LKBKB0BM-MGCP Samsung -25°C to +85°C LPDDR5 + UFS 3.1 uMCP FBGA x64 7500 Mbps uMCP (LPDDR5 + UFS 3.1) LPDDR5 + UFS integrated 3750 MHz 1.8V / 1.05V / 0.5V 297-FBGA class 297 balls Commercial Grade Auto Refresh / Self Refresh Multi-bank LPDDR5 architecture DVFS, Deep Sleep, Self Refresh Samsung 12nm-class LPDDR5X process No JEDEC LPDDR5X + UFS 3.1 compliant
Samsung Semiconductor K3LKCKC0BM-MGCP Samsung -25°C to +85°C LPDDR5X + UFS 3.1 uMCP FBGA x64 8533 Mbps uMCP (LPDDR5X + UFS 3.1) LPDDR5X + UFS integrated 4266 MHz 1.8V / 1.05V / 0.5V 297-FBGA class 297 balls Commercial Grade Auto Refresh / Self Refresh Multi-bank LPDDR5X architecture DVFS, Deep Sleep, Self Refresh Samsung 12nm-class LPDDR5X process No JEDEC LPDDR5X + UFS 3.1 compliant
Samsung Semiconductor K4A4G085WF-BIWE Samsung 0°C to +85°C DDR4 SDRAM FBGA x8 3200 Mbps 4Gb 512M ×8 1600 MHz 1.2V / 1.2V 78-ball FBGA 78 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A4G165WF-BCTD Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 2666 Mbps 4Gb 256M ×16 1333 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A4G165WF-BIWE Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 3200 Mbps 4Gb 256M ×16 1600 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A8G165WB-BCRC Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 2400 Mbps 8Gb 512M ×16 1200 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 20nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A8G165WC-BCTD Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 2666 Mbps 8Gb 512M ×16 1333 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A8G165WC-BCWE Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 3200 Mbps 8Gb 512M ×16 1600 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4A8G165WC-BITD Samsung 0°C to +85°C DDR4 SDRAM FBGA x16 3200 Mbps 8Gb 512M ×16 1600 MHz 1.2V / 1.2V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 16 Banks / 4 Bank Groups Power-Down, Self Refresh, DLL-off 10nm-class DRAM No JEDEC DDR4 compliant
Samsung Semiconductor K4AAG085WA-BCWE Samsung 0°C to +85°C DDR5 SDRAM FBGA x8 5600 Mbps 16Gb 2G ×8 2800 MHz VDD=1.1V / VDDQ=1.1V 78-ball FBGA 78 balls Commercial Grade Auto Refresh / Self Refresh 32 Banks / 8 Bank Groups Power-Down, Self Refresh, Decision Feedback Equalization (DFE) 14nm/12nm-class DRAM On-die ECC JEDEC DDR5 compliant
Samsung Semiconductor K4AAG165WA-BCWE Samsung 0°C to +85°C DDR5 SDRAM FBGA x16 5600 Mbps 16Gb 1G ×16 2800 MHz VDD=1.1V / VDDQ=1.1V 96-ball FBGA 96 balls Commercial Grade Auto Refresh / Self Refresh 32 Banks / 8 Bank Groups Power-Down, Self Refresh, DFE 14nm/12nm-class DRAM On-die ECC JEDEC DDR5 compliant

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