Infineon
Results: 10
Brand
Switching Characteristics
Input Capacitance (Ciss)
Operating Junction Temperature (TJ)
Transistor Type
Mounting Style
Process Technology
Product Category
Package Type
Product
| Image | Brand | Title | Switching Characteristics | Operating Junction Temperature (TJ) | Package Type | Mounting Style | Input Capacitance (Ciss) | Gate Charge (Qg) | Power Dissipation (PD) | Gate-Source Voltage (VGS) | Pulsed Drain Current (ID Pulse) | Continuous Drain Current (ID) | Drain-Source Voltage (VDS) | Process Technology | Transistor Type | Product Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Infineon | IRFB3004PBF | Ultra Fast Switching | -55°C ~ +175°C | TO-220AB | Through Hole | 9600pF Typ | 210nC Typ | 375W | ±20V | 1400A | 240A | 40V | HEXFET® Power MOSFET Technology | N-Channel Power MOSFET | Power MOSFET | |
| Infineon | IRF100P219 | Fast Switching | -55°C ~ +175°C | TO-247AC | Through Hole | 12200pF Typ | 230nC Typ | 375W | ±20V | 840A | 160A | 100V | HEXFET® Power MOSFET Technology | N-Channel Power MOSFET | Power MOSFET | |
| Infineon | IPW65R110CFDA Infineon | Fast Switching | -55°C~150°C | TO-247 | Through Hole | 1350pF | 36nC | 208W | ±20V | 93A | 31A | 650V | CoolMOS™ CFD7A | N-Channel MOSFET | CoolMOS™ Power MOSFET | |
| Infineon | IPW65R019C7 Infineon | High Speed Switching | -55°C~150°C | TO-247 | Through Hole | 10200pF | 170nC | 431W | ±20V | 306A | 102A | 650V | CoolMOS™ C7 | N-Channel MOSFET | CoolMOS™ Power MOSFET | |
| Infineon | IPD12CN10NG Infineon | Fast Switching | -55°C~175°C | TO-252 / DPAK | Surface Mount | 3000pF | 44nC | 208W | ±20V | 228A | 57A | 100V | OptiMOS™ | N-Channel MOSFET | Power MOSFET | |
| Infineon | IPD050N10N5 Infineon | Fast Switching | -55°C~175°C | TO-252 / DPAK | Surface Mount | 6400pF | 78nC | 179W | ±20V | 400A | 100A | 100V | OptiMOS™ 5 | N-Channel MOSFET | Power MOSFET | |
| Infineon | IPC90N04S5-3R6 Infineon | Fast Switching | -55°C~175°C | TO-220 | Through Hole | 3900pF | 36nC | 94W | ±20V | 360A | 90A | 40V | OptiMOS™ 5 | N-Channel MOSFET | Power MOSFET | |
| Infineon | IPB020N08N5 Infineon | Fast Switching | -55°C~175°C | TO-263 / D2PAK | Through Hole | 11800pF | 155nC | 375W | ±20V | 720A | 180A | 80V | OptiMOS™ 5 | N-Channel MOSFET | Power MOSFET | |
| Infineon | BSZ0501NSI Infineon | Ultra Fast Switching | -55°C~150°C | SuperSO8 | Surface Mount | 14500pF | 52nC | 71W | ±12V | 400A | 100A | 25V | OptiMOS™ | N-Channel MOSFET | Power MOSFET | |
| Infineon | BSC096N10LS5 Infineon | Fast Switching | -55°C~175°C | PG-TDSON-8 | Surface Mount | 3400pF | 38nC | 104W | ±20V | 320A | 80A | 100V | OptiMOS™ 5 | N-Channel MOSFET | Power MOSFET |





























































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