Micron
Results: 4
Brand
Internal Features
Random Read
Sequential Read
Pin Assignment
Package Type
Power Consumption Characteristics
Speed Mode
Bus Width
Operating Temperature Range
Product
| Image | Brand | Title | Internal Features | Random Read | Sequential Read | Storage Capacity | Operating Temperature Range | Pin Assignment | Package Type | Power Consumption Characteristics | Operating Voltage | Speed Mode | Bus Width | Interface Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron | MTFC8GAMALBH-AIT Micron | 3D NAND management, wear leveling, internal ECC, cache acceleration | Up to 13K IOPS | Read: up to 300 MB/s | 8GB | -40°C to +85°C | 153-ball FBGA | FBGA | Ultra-low standby current with advanced power-saving | VCC=2.7–3.6V, VCCQ=1.8V | HS400 | x8 | eMMC 5.1 | |
| Micron | MTFC8GAKAJCN-1M WT Micron | Advanced NAND management, ECC engine, bad block remapping | Up to 11K IOPS | Read: up to 250 MB/s | 8GB | -40°C to +85°C | 153-ball FBGA | FBGA | Dynamic power management and sleep mode | VCC=2.7–3.6V, VCCQ=1.7–1.95V | HS400 / HS200 | x8 | eMMC 5.1 | |
| Micron | MTFC8GACAENS-K1 AIT Micron | Wear leveling, internal ECC, cache buffering, secure write protection | Up to 10K IOPS | Read: up to 250 MB/s | 8GB | -40°C to +85°C | 153-ball FBGA | FBGA | Optimized low active and standby current | VCC=2.7–3.6V, VCCQ=1.7–1.95V | HS200 / DDR52 | x8 | eMMC 5.0 | |
| Micron | MTFC4GACAJCN-1M WT Micron | Advanced wear leveling, bad block management, ECC, TRIM, secure erase | Up to 7K IOPS | Read: up to 250 MB/s | 4GB | -40°C to +85°C | 153-ball FBGA | FBGA | Low-power managed NAND with sleep mode and cache support | VCC=2.7–3.6V, VCCQ=1.7–1.95V / 2.7–3.6V | HS200 / DDR52 | x8 | eMMC 5.0 |





























































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