MTFC4GACAJCN-1M WT Micron
Brand:
Internal Features:
Advanced wear leveling, bad block management, ECC, TRIM, secure erase
Random Read:
Up to 7K IOPS
Sequential Read:
Read: up to 250 MB/s
Storage Capacity:
4GB
Pin Assignment:
153-ball FBGA
Package Type:
FBGA
Power Consumption Characteristics:
Low-power managed NAND with sleep mode and cache support
Speed Mode:
HS200 / DDR52
Bus Width:
x8
Interface Standard:
eMMC 5.0
Operating Temperature Range:
-40°C to +85°C
Operating Voltage:
VCC=2.7–3.6V, VCCQ=1.7–1.95V / 2.7–3.6V
Model:
MTFC4GACAJCN-1M WT
Order Number:
MTFC4GACAJCN-1M WT
Description:
Micron managed NAND flash storage solution integrating embedded memory controller technology, reliable wear leveling, and efficient data management for industrial embedded systems, portable electronics, IoT devices, and compact computing applications requiring stable non-volatile storage performance.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Micron | |
| Internal Features: | Advanced wear leveling, bad block management, ECC, TRIM, secure erase | |
| Random Read: | Up to 7K IOPS | |
| Sequential Read: | Read: up to 250 MB/s | |
| Storage Capacity: | 4GB | |
| Pin Assignment: | 153-ball FBGA | |
| Package Type: | FBGA | |
| Power Consumption Characteristics: | Low-power managed NAND with sleep mode and cache support | |
| Speed Mode: | HS200 / DDR52 | |
| Bus Width: | x8 | |
| Interface Standard: | eMMC 5.0 | |
| Operating Temperature Range: | -40°C to +85°C | |
| Operating Voltage: | VCC=2.7–3.6V, VCCQ=1.7–1.95V / 2.7–3.6V |
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Tom
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