Vishay Semiconductor - Opto Division
Results: 1
Switching Characteristics
Input Capacitance (Ciss)
Gate-Source Voltage (VGS)
Pulsed Drain Current (ID Pulse)
Continuous Drain Current (ID)
Drain-Source Voltage (VDS)
Operating Junction Temperature (TJ)
Gate Charge (Qg)
Power Dissipation (PD)
Transistor Type
Mounting Style
Process Technology
Product Category
Package Type
Product
| Image | Brand | Title | Package Type | Product Category | Process Technology | Mounting Style | Transistor Type | Power Dissipation (PD) | Gate Charge (Qg) | Operating Junction Temperature (TJ) | Drain-Source Voltage (VDS) | Continuous Drain Current (ID) | Pulsed Drain Current (ID Pulse) | Gate-Source Voltage (VGS) | Input Capacitance (Ciss) | Switching Characteristics |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vishay Semiconductor - Opto Division | SI3552DV-T1-GE3 | TSOP-6 / SOT-23-6 | MOSFET Array / Power MOSFET | TrenchFET® Technology | Surface Mount | N- and P-Channel MOSFET Array | 1.15W | 2.1nC (N-Ch), 2.4nC (P-Ch) | -55°C ~ +150°C | 30V / -30V | 2.5A (N-Ch), -1.8A (P-Ch) | 8A (N-Ch), -7A (P-Ch) | ±20V | no information | Fast Switching, TrenchFET® MOSFET |





























































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