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Brand	Title	Product Category	Process Technology	Mounting Style	Transistor Type	Collector-Emitter Voltage (VCE)	Continuous Collector Current (IC)	Pulsed Collector Current (IC Pulse)	Gate-Emitter Voltage (VGE)	Power Dissipation (PD)	Collector-Emitter Saturation Voltage (VCE(sat))	Switching Speed	Gate Charge (Qg)	Input Capacitance (Cies)	Operating Junction Temperature (TJ)
Infineon	SPP20N60CFD Infineon	Power MOSFET	CoolMOS™ CFD	Through Hole	N-Channel MOSFET	600 V	20 A	80 A	±20 V (VGS)	208 W	N/A (MOSFET)	Fast Recovery Switching	58 nC typ	2200 pF typ	150°C
Infineon	SPD04N80C3 Infineon	Power MOSFET	CoolMOS™ C3	Surface Mount	N-Channel MOSFET	800 V	4 A	12 A	±20 V (VGS)	74 W	N/A (MOSFET)	Fast Switching	18 nC typ	650 pF typ	150°C
Infineon	SPA11N80C3 Infineon	Power MOSFET	CoolMOS™ C3	Surface Mount	N-Channel MOSFET	800 V	11 A	33 A	±20 V (VGS)	125 W	N/A (MOSFET)	Fast Switching	33 nC typ	1150 pF typ	150°C
Infineon	IPP60R099CP Infineon	Power MOSFET	CoolMOS™ CP	Through Hole	N-Channel MOSFET	600 V	31 A	93 A	±20 V (VGS)	255 W	N/A (MOSFET)	Very Fast Switching	60 nC typ	1600 pF typ	150°C
Infineon	IKW75N65ES5 Infineon	IGBT Discrete	TRENCHSTOP™ 5 S5	Through Hole	N-Channel IGBT	650 V	75 A	225 A	±20 V	469 W	1.60 V typ @ IC=75A	Soft Switching	250 nC typ	5300 pF typ	175°C
Infineon	IKW75N65EH5 Infineon	IGBT Discrete	TRENCHSTOP™ 5 H5	Through Hole	N-Channel IGBT	650 V	75 A	225 A	±20 V	469 W	1.55 V typ @ IC=75A	Ultrafast Switching	230 nC typ	5100 pF typ	175°C
Infineon	IKQ50N120CH3 Infineon	IGBT Discrete	TRENCHSTOP™ IGBT3	Through Hole	N-Channel IGBT	1200 V	83 A	200 A	±20 V	313 W	1.85 V typ @ IC=50A	High Speed Switching	240 nC typ	6200 pF typ	175°C
Infineon	IKQ140N120CH7 Infineon	IGBT Discrete	TRENCHSTOP™ IGBT7	Through Hole	N-Channel IGBT	1200 V	233 A	560 A	±20 V	882 W	1.95 V typ @ IC=140A	Fast Switching	930 nC typ	15400 pF typ	175°C
Infineon	IKQ100N120CH7 Infineon	IGBT Discrete	TRENCHSTOP™ IGBT7	Through Hole	N-Channel IGBT	1200 V	166 A	400 A	±20 V	721 W	2.0 V typ @ IC=100A	Fast Switching	696 nC typ	11800 pF typ	175°C

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Operating Junction Temperature (TJ)

Input Capacitance (Cies)

Gate Charge (Qg)

Switching Speed

Collector-Emitter Saturation Voltage (VCE(sat))

Power Dissipation (PD)

Gate-Emitter Voltage (VGE)

Pulsed Collector Current (IC Pulse)

Continuous Collector Current (IC)

Collector-Emitter Voltage (VCE)

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Mounting Style

Process Technology

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