SPA11N80C3 Infineon
Brand:
Operating Junction Temperature (TJ):
150°C
Input Capacitance (Cies):
1150 pF typ
Gate Charge (Qg):
33 nC typ
Switching Speed:
Fast Switching
Collector-Emitter Saturation Voltage (VCE(sat)):
N/A (MOSFET)
Power Dissipation (PD):
125 W
Gate-Emitter Voltage (VGE):
±20 V (VGS)
Pulsed Collector Current (IC Pulse):
33 A
Continuous Collector Current (IC):
11 A
Collector-Emitter Voltage (VCE):
800 V
Transistor Type:
N-Channel MOSFET
Mounting Style:
Surface Mount
Process Technology:
CoolMOS™ C3
Product Category:
Power MOSFET
Model:
SPA11N80C3
Order Number:
SPA11N80C3
Description:
Infineon SPA11N80C3 is an 800V CoolMOS™ C3 N-channel MOSFET optimized for high-voltage switching applications, combining low gate charge, reduced switching losses and excellent efficiency for offline SMPS, lighting ballasts, industrial converters and consumer power electronics.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Operating Junction Temperature (TJ): | 150°C | |
| Input Capacitance (Cies): | 1150 pF typ | |
| Gate Charge (Qg): | 33 nC typ | |
| Switching Speed: | Fast Switching | |
| Collector-Emitter Saturation Voltage (VCE(sat)): | N/A (MOSFET) | |
| Power Dissipation (PD): | 125 W | |
| Gate-Emitter Voltage (VGE): | ±20 V (VGS) | |
| Pulsed Collector Current (IC Pulse): | 33 A | |
| Continuous Collector Current (IC): | 11 A | |
| Collector-Emitter Voltage (VCE): | 800 V | |
| Transistor Type: | N-Channel MOSFET | |
| Mounting Style: | Surface Mount | |
| Process Technology: | CoolMOS™ C3 | |
| Product Category: | Power MOSFET |
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Tom
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