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IKW75N65ES5 Infineon

Name: IKW75N65ES5 Infineon
SKU: IKW75N65ES5

Brand:

Infineon

Operating Junction Temperature (TJ):

175°C

Input Capacitance (Cies):

5300 pF typ

Gate Charge (Qg):

250 nC typ

Switching Speed:

Soft Switching

Collector-Emitter Saturation Voltage (VCE(sat)):

1.60 V typ @ IC=75A

Power Dissipation (PD):

469 W

Gate-Emitter Voltage (VGE):

±20 V

Pulsed Collector Current (IC Pulse):

225 A

Continuous Collector Current (IC):

75 A

Collector-Emitter Voltage (VCE):

650 V

Transistor Type:

N-Channel IGBT

Mounting Style:

Through Hole

Process Technology:

TRENCHSTOP™ 5 S5

Product Category:

IGBT Discrete

Model:

IKW75N65ES5

Order Number:

IKW75N65ES5

Description:

Infineon IKW75N65ES5 is a 650V soft-switching TRENCHSTOP™ 5 IGBT transistor engineered for resonant and soft-switching topologies, providing low switching losses, improved EMI characteristics and high reliability in induction cookers, power supplies and industrial heating systems.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Operating Junction Temperature (TJ)：	175°C
Input Capacitance (Cies)：	5300 pF typ
Gate Charge (Qg)：	250 nC typ
Switching Speed：	Soft Switching
Collector-Emitter Saturation Voltage (VCE(sat))：	1.60 V typ @ IC=75A
Power Dissipation (PD)：	469 W
Gate-Emitter Voltage (VGE)：	±20 V
Pulsed Collector Current (IC Pulse)：	225 A
Continuous Collector Current (IC)：	75 A
Collector-Emitter Voltage (VCE)：	650 V
Transistor Type：	N-Channel IGBT
Mounting Style：	Through Hole
Process Technology：	TRENCHSTOP™ 5 S5
Product Category：	IGBT Discrete

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IKW75N65ES5 Infineon

Product parameters

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