IPP60R099CP Infineon
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Operating Junction Temperature (TJ): | 150°C | |
| Input Capacitance (Cies): | 1600 pF typ | |
| Gate Charge (Qg): | 60 nC typ | |
| Switching Speed: | Very Fast Switching | |
| Collector-Emitter Saturation Voltage (VCE(sat)): | N/A (MOSFET) | |
| Power Dissipation (PD): | 255 W | |
| Gate-Emitter Voltage (VGE): | ±20 V (VGS) | |
| Pulsed Collector Current (IC Pulse): | 93 A | |
| Continuous Collector Current (IC): | 31 A | |
| Collector-Emitter Voltage (VCE): | 600 V | |
| Transistor Type: | N-Channel MOSFET | |
| Mounting Style: | Through Hole | |
| Process Technology: | CoolMOS™ CP | |
| Product Category: | Power MOSFET |

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