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IPP60R099CP Infineon

Name: IPP60R099CP Infineon
SKU: IPP60R099CP

Brand:

Infineon

Operating Junction Temperature (TJ):

150°C

Input Capacitance (Cies):

1600 pF typ

Gate Charge (Qg):

60 nC typ

Switching Speed:

Very Fast Switching

Collector-Emitter Saturation Voltage (VCE(sat)):

N/A (MOSFET)

Power Dissipation (PD):

255 W

Gate-Emitter Voltage (VGE):

±20 V (VGS)

Pulsed Collector Current (IC Pulse):

93 A

Continuous Collector Current (IC):

31 A

Collector-Emitter Voltage (VCE):

600 V

Transistor Type:

N-Channel MOSFET

Mounting Style:

Through Hole

Process Technology:

CoolMOS™ CP

Product Category:

Power MOSFET

Model:

IPP60R099CP

Order Number:

IPP60R099CP

Description:

Infineon IPP60R099CP is a 600V CoolMOS™ power MOSFET featuring superjunction technology, very low RDS(on), high efficiency and fast switching performance, widely used in telecom power supplies, server SMPS, solar inverters and high-density industrial power conversion circuits.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Operating Junction Temperature (TJ)：	150°C
Input Capacitance (Cies)：	1600 pF typ
Gate Charge (Qg)：	60 nC typ
Switching Speed：	Very Fast Switching
Collector-Emitter Saturation Voltage (VCE(sat))：	N/A (MOSFET)
Power Dissipation (PD)：	255 W
Gate-Emitter Voltage (VGE)：	±20 V (VGS)
Pulsed Collector Current (IC Pulse)：	93 A
Continuous Collector Current (IC)：	31 A
Collector-Emitter Voltage (VCE)：	600 V
Transistor Type：	N-Channel MOSFET
Mounting Style：	Through Hole
Process Technology：	CoolMOS™ CP
Product Category：	Power MOSFET

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IPP60R099CP Infineon

Product parameters

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