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SPP20N60CFD Infineon

Name: SPP20N60CFD Infineon
SKU: SPP20N60CFD

Brand:

Infineon

Operating Junction Temperature (TJ):

150°C

Input Capacitance (Cies):

2200 pF typ

Gate Charge (Qg):

58 nC typ

Switching Speed:

Fast Recovery Switching

Collector-Emitter Saturation Voltage (VCE(sat)):

N/A (MOSFET)

Power Dissipation (PD):

208 W

Gate-Emitter Voltage (VGE):

±20 V (VGS)

Pulsed Collector Current (IC Pulse):

80 A

Continuous Collector Current (IC):

20 A

Collector-Emitter Voltage (VCE):

600 V

Transistor Type:

N-Channel MOSFET

Mounting Style:

Through Hole

Process Technology:

CoolMOS™ CFD

Product Category:

Power MOSFET

Model:

SPP20N60CFD

Order Number:

SPP20N60CFD

Description:

Infineon SPP20N60CFD is a 600V fast-switching CoolMOS™ CFD series MOSFET integrating low conduction losses, optimized body diode performance and high ruggedness, making it suitable for PFC stages, server power supplies, solar systems and industrial switching applications.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Operating Junction Temperature (TJ)：	150°C
Input Capacitance (Cies)：	2200 pF typ
Gate Charge (Qg)：	58 nC typ
Switching Speed：	Fast Recovery Switching
Collector-Emitter Saturation Voltage (VCE(sat))：	N/A (MOSFET)
Power Dissipation (PD)：	208 W
Gate-Emitter Voltage (VGE)：	±20 V (VGS)
Pulsed Collector Current (IC Pulse)：	80 A
Continuous Collector Current (IC)：	20 A
Collector-Emitter Voltage (VCE)：	600 V
Transistor Type：	N-Channel MOSFET
Mounting Style：	Through Hole
Process Technology：	CoolMOS™ CFD
Product Category：	Power MOSFET

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SPP20N60CFD Infineon

Product parameters

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