IKW75N65EH5 Infineon
Brand:
Operating Junction Temperature (TJ):
175°C
Input Capacitance (Cies):
5100 pF typ
Gate Charge (Qg):
230 nC typ
Switching Speed:
Ultrafast Switching
Collector-Emitter Saturation Voltage (VCE(sat)):
1.55 V typ @ IC=75A
Power Dissipation (PD):
469 W
Gate-Emitter Voltage (VGE):
±20 V
Pulsed Collector Current (IC Pulse):
225 A
Continuous Collector Current (IC):
75 A
Collector-Emitter Voltage (VCE):
650 V
Transistor Type:
N-Channel IGBT
Mounting Style:
Through Hole
Process Technology:
TRENCHSTOP™ 5 H5
Product Category:
IGBT Discrete
Model:
IKW75N65EH5
Order Number:
IKW75N65EH5
Description:
Infineon IKW75N65EH5 is a 650V high-speed IGBT based on TRENCHSTOP™ 5 H5 technology, offering optimized switching efficiency, reduced tail current and robust thermal behavior for induction heating, motor drives, UPS units and high-frequency industrial converter applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Operating Junction Temperature (TJ): | 175°C | |
| Input Capacitance (Cies): | 5100 pF typ | |
| Gate Charge (Qg): | 230 nC typ | |
| Switching Speed: | Ultrafast Switching | |
| Collector-Emitter Saturation Voltage (VCE(sat)): | 1.55 V typ @ IC=75A | |
| Power Dissipation (PD): | 469 W | |
| Gate-Emitter Voltage (VGE): | ±20 V | |
| Pulsed Collector Current (IC Pulse): | 225 A | |
| Continuous Collector Current (IC): | 75 A | |
| Collector-Emitter Voltage (VCE): | 650 V | |
| Transistor Type: | N-Channel IGBT | |
| Mounting Style: | Through Hole | |
| Process Technology: | TRENCHSTOP™ 5 H5 | |
| Product Category: | IGBT Discrete |
Products with the same attribute : 0
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