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SPD04N80C3 Infineon

Name: SPD04N80C3 Infineon
SKU: SPD04N80C3

Brand:

Infineon

Operating Junction Temperature (TJ):

150°C

Input Capacitance (Cies):

650 pF typ

Gate Charge (Qg):

18 nC typ

Switching Speed:

Fast Switching

Collector-Emitter Saturation Voltage (VCE(sat)):

N/A (MOSFET)

Power Dissipation (PD):

74 W

Gate-Emitter Voltage (VGE):

±20 V (VGS)

Pulsed Collector Current (IC Pulse):

12 A

Continuous Collector Current (IC):

4 A

Collector-Emitter Voltage (VCE):

800 V

Transistor Type:

N-Channel MOSFET

Mounting Style:

Surface Mount

Process Technology:

CoolMOS™ C3

Product Category:

Power MOSFET

Model:

SPD04N80C3

Order Number:

SPD04N80C3

Description:

Infineon SPD04N80C3 is an 800V CoolMOS™ C3 power MOSFET designed for compact high-voltage power supplies, providing low capacitance, efficient switching behavior and strong avalanche ruggedness for industrial SMPS, lighting systems and energy-efficient converter topologies.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Operating Junction Temperature (TJ)：	150°C
Input Capacitance (Cies)：	650 pF typ
Gate Charge (Qg)：	18 nC typ
Switching Speed：	Fast Switching
Collector-Emitter Saturation Voltage (VCE(sat))：	N/A (MOSFET)
Power Dissipation (PD)：	74 W
Gate-Emitter Voltage (VGE)：	±20 V (VGS)
Pulsed Collector Current (IC Pulse)：	12 A
Continuous Collector Current (IC)：	4 A
Collector-Emitter Voltage (VCE)：	800 V
Transistor Type：	N-Channel MOSFET
Mounting Style：	Surface Mount
Process Technology：	CoolMOS™ C3
Product Category：	Power MOSFET

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SPD04N80C3 Infineon

Product parameters

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