IKQ50N120CH3 Infineon
Brand:
Operating Junction Temperature (TJ):
175°C
Input Capacitance (Cies):
6200 pF typ
Gate Charge (Qg):
240 nC typ
Switching Speed:
High Speed Switching
Collector-Emitter Saturation Voltage (VCE(sat)):
1.85 V typ @ IC=50A
Power Dissipation (PD):
313 W
Gate-Emitter Voltage (VGE):
±20 V
Pulsed Collector Current (IC Pulse):
200 A
Continuous Collector Current (IC):
83 A
Collector-Emitter Voltage (VCE):
1200 V
Transistor Type:
N-Channel IGBT
Mounting Style:
Through Hole
Process Technology:
TRENCHSTOP™ IGBT3
Product Category:
IGBT Discrete
Model:
IKQ50N120CH3
Order Number:
IKQ50N120CH3
Description:
Infineon IKQ50N120CH3 is a 1200V discrete IGBT transistor using advanced trench technology with low saturation voltage, efficient switching characteristics and integrated diode, suitable for industrial inverters, welding equipment, renewable energy converters and high-efficiency switching power systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Operating Junction Temperature (TJ): | 175°C | |
| Input Capacitance (Cies): | 6200 pF typ | |
| Gate Charge (Qg): | 240 nC typ | |
| Switching Speed: | High Speed Switching | |
| Collector-Emitter Saturation Voltage (VCE(sat)): | 1.85 V typ @ IC=50A | |
| Power Dissipation (PD): | 313 W | |
| Gate-Emitter Voltage (VGE): | ±20 V | |
| Pulsed Collector Current (IC Pulse): | 200 A | |
| Continuous Collector Current (IC): | 83 A | |
| Collector-Emitter Voltage (VCE): | 1200 V | |
| Transistor Type: | N-Channel IGBT | |
| Mounting Style: | Through Hole | |
| Process Technology: | TRENCHSTOP™ IGBT3 | |
| Product Category: | IGBT Discrete |
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