SK Hynix
Results: 11
Brand
JEDEC Compliance
ECC Support
Process Technology
Power Saving Features
Bank Architecture
Temperature Grade
Pin/Ball Count
Package Size
VDD/VDDQ
Clock Frequency
Organization
I/O Width
Interface Standard
Operating Temperature Range
Product
| Image | Brand | Title | Operating Temperature Range | Interface Standard | Package Type | I/O Width | Data Rate | Density | Organization | Clock Frequency | VDD/VDDQ | Package Size | Pin/Ball Count | Temperature Grade | Refresh Mode | Bank Architecture | Power Saving Features | Process Technology | ECC Support | JEDEC Compliance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SK Hynix | H5WRAGESM8W-N8L | -40C to +95C | LPDDR4 | FBGA-200 | x16 | 3200 MT/s | 8Gb | 512M x16 | 1600 MHz | 1.1V/1.1V | 10×14.5 mm | 200 Balls | Industrial | Auto Refresh,Self Refresh | 8 Banks | Deep Power Down,Self Refresh | 2x nm Class | No | JESD209-4 LPDDR4 | |
| SK Hynix | H5AG48DXNDX116N SK Hynix | 0°C to +95°C | DDR4 SDRAM | FBGA | x8 | 3200 MT/s | 16Gb | 2G ×8 | 1600 MHz | VDD=1.2V / VDDQ=1.2V | Standard DDR4 FBGA | 78-ball FBGA | Commercial Grade | Auto Refresh / Self Refresh | 16 Banks / 4 Bank Groups | Power-Down Mode, Self Refresh, DLL-off | 1Y/1Z nm-class DRAM process | No | JEDEC DDR4 compliant | |
| SK Hynix | H9HCNNN8KUMLHR-NMN SK Hynix | -25°C to +85°C | LPDDR4X + eMMC/NAND | MCP FBGA | x32 (LPDDR4X) | Up to 4266 Mbps | eMCP (LPDDR4X + NAND Flash) | LPDDR4X + NAND integrated | Up to 2133 MHz | Core 1.1V / I/O 0.6V | PoP/eMCP FBGA | ~221-ball FBGA | Commercial Grade | Self Refresh | Multi-bank LPDDR4X architecture | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile memory process | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HCNNNBKUMLHR-NMO SK Hynix | -25°C to +85°C | LPDDR4X + eMMC/NAND | MCP FBGA | x32 (LPDDR4X) | Up to 4266 Mbps | eMCP (LPDDR4X + NAND Flash) | LPDDR4X + NAND integrated | Up to 2133 MHz | Core 1.1V / I/O 0.6V | PoP/eMCP FBGA | ~221-ball FBGA | Commercial Grade | Self Refresh | Multi-bank LPDDR4X architecture | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile memory process | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HCNNNBPUMLHR-NLE SK Hynix | -25°C to +85°C | LPDDR4X + eMMC/NAND | MCP FBGA | x32 (LPDDR4X) | Up to 4266 Mbps | eMCP (LPDDR4X + NAND Flash) | LPDDR4X + NAND integrated | Up to 2133 MHz | Core 1.1V / I/O 0.6V | PoP/eMCP FBGA | ~221-ball FBGA | Commercial Grade | Self Refresh | Multi-bank LPDDR4X architecture | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile memory process | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HCNNNCPMMLHR-NME SK Hynix | -25°C to +85°C | LPDDR4X SDRAM | FBGA | x32 | 3733 Mbps | 32Gb | 1G×32 | 1866 MHz | VDD1=1.1V / VDDQ=0.6V | FBGA MCP | 200-ball | Commercial Grade | Auto Refresh / Self Refresh | 2 Channel / 2CS | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile DRAM | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HCNNNCRUMLPR-NME SK Hynix | -25°C to +85°C | LPDDR4X SDRAM | FBGA | x32 | 4266 Mbps | 32Gb | 1G×32 | 2133 MHz | VDD1=1.1V / VDDQ=0.6V | FBGA MCP | 200-ball | Commercial Grade | Auto Refresh / Self Refresh | 2 Channel / 2CS | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile DRAM | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HCNNNFAMALTR-NME SK Hynix | -25°C to +85°C | LPDDR4X SDRAM | FBGA | x32 | 4266 Mbps | 64Gb | 2G×32 | 2133 MHz | VDD1=1.1V / VDDQ=0.6V | FBGA MCP | 200-ball | Commercial Grade | Auto Refresh / Self Refresh | Multi-bank LPDDR4X architecture | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile DRAM | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9HKNNNCRMMVBR-NEH SK Hynix | 0°C to +85°C | LPDDR4X SDRAM | FBGA | x32 | 4266 Mbps | 64Gb | 2G×32 | 2133 MHz | VDD1=1.1V / VDDQ=0.6V | FBGA MCP | 200-ball | Commercial Grade | Auto Refresh / Self Refresh | 2 Channel / 2CS | Deep Sleep, Self Refresh, DVFS | 1X nm-class mobile DRAM | No | JEDEC LPDDR4X compliant | |
| SK Hynix | H9TCNNN4GDALJR-NGM SK Hynix | -25°C to +85°C | LPDDR4X + eMMC 5.1 | eMCP FBGA | x32 | LPDDR4X 3733 Mbps | eMCP (DRAM+eMMC) | LPDDR4X + eMMC integrated | 1866 MHz | 1.1V / 0.6V / eMMC VCC 3.3V | FBGA | 221-ball class | Commercial Grade | Self Refresh | Multi-bank LPDDR4X architecture | Deep Sleep, Self Refresh | Mobile eMCP process | No | JEDEC LPDDR4X + eMMC compliant | |
| SK Hynix | H5ANAG6NDMR-VKC | 0°C to +95°C | DDR4 SDRAM | FBGA | x16 | 3200 MT/s | 8Gb | 512M × 16 | 1.6 GHz | 1.2V / 1.2V | 8 × 12 mm typ. | 78-ball | Commercial Grade | Auto Refresh / Self Refresh | 16 Banks, 4 Bank Groups | Self Refresh, Power Down Mode | 1X nm-class DRAM | On-die ECC | JEDEC DDR4 compliant |





























































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