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Brand	Title	Internal Features	Random Read	Sequential Read	Storage Capacity	Operating Temperature Range	Pin Assignment	Package Type	Power Consumption Characteristics	Operating Voltage	Speed Mode	Bus Width	Interface Standard
Samsung Semiconductor	KLMAG2GESD-B04Q	Samsung eMMC 5.1 controller；ECC；Wear Leveling；Bad Block Management；RPMB；Boot Partition support；Cache support；BKOPS；Secure Trim；HS400 interface；Automotive-grade storage	no information	no information	16GB	-40°C to +105°C	JEDEC eMMC FBGA153 standard pinout	FBGA-153，11.5 × 13 × 0.8 mm	High-efficiency automotive/mobile eMMC； Sleep Mode、Power Classes、BKOPS	VCC: 2.7–3.6V；VCCQ: 1.7–1.95V / 2.7–3.6V	HS400	1-bit / 4-bit / 8-bit	e.MMC 5.1
Samsung Semiconductor	KLM8G1GETF-B041	e.MMC 5.1	—	Up to 300 MB/s	8GB	-25°C to +85°C	JEDEC eMMC FBGA153 standard pinout	FBGA-153，11.5 × 13 × 0.8 mm	Low-power mobile eMMC with Sleep/Awake support and advanced power classes	VCC: 2.7–3.6V；VCCQ: 1.7–1.95V / 2.7–3.6V	HS400	1-bit / 4-bit / 8-bit	e.MMC 5.1
Samsung Semiconductor	FEMDNN032G-C9A55	e.MMC 5.1	—	Up to 346 MB/s	32GB	Operating: -25°C to +85°C；Storage: -40°C to +85°C	JEDEC eMMC FBGA153 standard pinout	FBGA-153	Active：ICC 104mA，ICCQ 108mA；Standby：ICC 36uA，ICCQ 400uA；Sleep：ICC 36uA，ICCQ 390uA	VCC: 2.7–3.6V；VCCQ: 1.7–1.95V / 2.7–3.6V	HS200	1-bit / 4-bit / 8-bit	e.MMC 5.1
Samsung Semiconductor	KLMDG4UCTB-B041	Advanced V-NAND controller, secure erase, command queue engine	Up to 16K IOPS	Read up to 320 MB/s	256GB	-25°C to +85°C	153-ball FBGA	FBGA	Ultra-low power standby and sleep	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMDG2RCTE-B041	Internal ECC, intelligent wear leveling, cache acceleration	Up to 16K IOPS	Read up to 320 MB/s	256GB	-25°C to +85°C	153-ball FBGA	FBGA	Low-power V-NAND operation	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMCG2UCTB-B041	Enhanced ECC, V-NAND flash management, secure trim	Up to 15K IOPS	Read up to 320 MB/s	128GB	-25°C to +85°C	153-ball FBGA	FBGA	Advanced low-power controller	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMCG1RCTE-B041	V-NAND controller, command queue, secure boot	Up to 15K IOPS	Read up to 320 MB/s	128GB	-25°C to +85°C	153-ball FBGA	FBGA	Optimized sleep and active modes	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMBG4GEUF-B04Q	Advanced garbage collection, ECC, wear leveling	Up to 14K IOPS	Read up to 320 MB/s	64GB	-25°C to +85°C	153-ball FBGA	FBGA	Ultra-low standby current	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMBG2JETD-B041	V-NAND flash management, secure erase, cache optimization	Up to 13K IOPS	Read up to 320 MB/s	64GB	-25°C to +85°C	153-ball FBGA	FBGA	Dynamic voltage scaling support	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMBG1UCTC-B041	3D V-NAND management, advanced ECC, TRIM support	Up to 12K IOPS	Read up to 320 MB/s	64GB	-25°C to +85°C	153-ball FBGA	FBGA	Advanced low-power NAND controller	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMAG2GEUF-B04Q	Internal ECC, secure write protection, enhanced cache	Up to 11K IOPS	Read up to 300 MB/s	32GB	-25°C to +85°C	153-ball FBGA	FBGA	Low standby power with sleep mode	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMAG1JETD-B041	Wear leveling, bad block remapping, command queue support	Up to 10K IOPS	Read up to 300 MB/s	16GB	-25°C to +85°C	153-ball FBGA	FBGA	Optimized active/idle current	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLMAG1JENB-B041	NAND management, ECC engine, secure trim, cache acceleration	Up to 10K IOPS	Read up to 300 MB/s	16GB	-25°C to +85°C	153-ball FBGA	FBGA	Advanced low-power standby mode	VCC=2.7–3.6V, VCCQ=1.8V	HS400	x8	eMMC 5.1
Samsung Semiconductor	KLM8G1GEUF-B04Q	Internal ECC, wear leveling, garbage collection, boot partition support	Up to 8K IOPS	Read up to 250 MB/s	8GB	-25°C to +85°C	153-ball FBGA	FBGA	Dynamic power management	VCC=2.7–3.6V, VCCQ=1.7–1.95V	HS200	x8	eMMC 5.0
Samsung Semiconductor	KLM8G1GEUF-B04P	Wear leveling, bad block management, internal ECC, cache buffer, secure erase	Up to 7K IOPS	Read up to 250 MB/s	8GB	-25°C to +85°C	153-ball FBGA	FBGA	Low active current, sleep mode support	VCC=2.7–3.6V, VCCQ=1.7–1.95V	HS200	x8	eMMC 5.0

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