Home Electronic Components Memory ICs eMMC Samsung Semiconductor

KLMDG2RCTE-B041

Name: KLMDG2RCTE-B041
SKU: KLMDG2RCTE-B041

Brand:

Samsung Semiconductor

Internal Features:

Internal ECC, intelligent wear leveling, cache acceleration

Random Read:

Up to 16K IOPS

Sequential Read:

Read up to 320 MB/s

Storage Capacity:

256GB

Pin Assignment:

153-ball FBGA

Package Type:

FBGA

Power Consumption Characteristics:

Low-power V-NAND operation

Speed Mode:

HS400

Bus Width:

Interface Standard:

eMMC 5.1

Operating Temperature Range:

-25°C to +85°C

Operating Voltage:

VCC=2.7–3.6V, VCCQ=1.8V

Model:

KLMDG2RCTE-B041

Order Number:

KLMDG2RCTE-B041

Description:

Samsung eMMC managed flash storage component engineered for high-reliability embedded systems, supporting efficient wear leveling, advanced ECC functionality, and stable performance in industrial and consumer electronic environments.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Samsung Semiconductor
Internal Features：	Internal ECC, intelligent wear leveling, cache acceleration
Random Read：	Up to 16K IOPS
Sequential Read：	Read up to 320 MB/s
Storage Capacity：	256GB
Pin Assignment：	153-ball FBGA
Package Type：	FBGA
Power Consumption Characteristics：	Low-power V-NAND operation
Speed Mode：	HS400
Bus Width：	x8
Interface Standard：	eMMC 5.1
Operating Temperature Range：	-25°C to +85°C
Operating Voltage：	VCC=2.7–3.6V, VCCQ=1.8V

Products with the same attribute : 0

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KLMDG2RCTE-B041

Product parameters

Tom

Product Category

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