Home Electronic Components Memory ICs eMMC Samsung Semiconductor

KLMBG2JETD-B041

Name: KLMBG2JETD-B041
SKU: KLMBG2JETD-B041

Brand:

Samsung Semiconductor

Internal Features:

V-NAND flash management, secure erase, cache optimization

Random Read:

Up to 13K IOPS

Sequential Read:

Read up to 320 MB/s

Storage Capacity:

64GB

Pin Assignment:

153-ball FBGA

Package Type:

FBGA

Power Consumption Characteristics:

Dynamic voltage scaling support

Speed Mode:

HS400

Bus Width:

Interface Standard:

eMMC 5.1

Operating Temperature Range:

-25°C to +85°C

Operating Voltage:

VCC=2.7–3.6V, VCCQ=1.8V

Model:

KLMBG2JETD-B041

Order Number:

KLMBG2JETD-B041

Description:

Samsung embedded flash memory component optimized for low-voltage operation, efficient storage management, and reliable multimedia data handling in industrial automation, networking devices, and mobile electronic platforms.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Samsung Semiconductor
Internal Features：	V-NAND flash management, secure erase, cache optimization
Random Read：	Up to 13K IOPS
Sequential Read：	Read up to 320 MB/s
Storage Capacity：	64GB
Pin Assignment：	153-ball FBGA
Package Type：	FBGA
Power Consumption Characteristics：	Dynamic voltage scaling support
Speed Mode：	HS400
Bus Width：	x8
Interface Standard：	eMMC 5.1
Operating Temperature Range：	-25°C to +85°C
Operating Voltage：	VCC=2.7–3.6V, VCCQ=1.8V

Products with the same attribute : 0

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KLMBG2JETD-B041

Product parameters

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