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Brand	Title	Operating Temperature Range	Interface Standard	Package Type	I/O Width	Data Rate	Density	Organization	Clock Frequency	VDD/VDDQ	Package Size	Pin/Ball Count	Temperature Grade	Refresh Mode	Bank Architecture	Power Saving Features	Process Technology	ECC Support	JEDEC Compliance
Micron	MT53E1G32D2FW-046 AAT:B Micron	-40°C to +105°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	32Gb	1G x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Automotive AEC-Q100 Grade 2	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT53E1G32D2FW-046 WT:B Micron	-25°C to +85°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	32Gb	1G x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Wide Temperature	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT53E512M32D1ZW-046 WT:B Micron	-25°C to +85°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	16Gb	512M x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Wide Temperature	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT40A1G8SA-062E IT:E Micron	-40°C to +95°C	DDR4 SDRAM	FBGA	8-bit	3200MT/s	8Gb	1G x 8	1.6GHz	1.2V (1.14V-1.26V)	7.5mm x 10.5mm	78	Industrial	Auto refresh, self refresh, partial array self refresh	16 internal banks (4 groups of 4 banks)	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), fine granularity refresh	20nm CMOS	Yes (On-die ECC available)	Yes (JESD79-4)
Micron	MT53E1G32D2NP-046 WT:B Micron	-25°C to +85°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	32Gb	1G x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Wide Temperature	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT53E512M32D1ZW-046 IT:B Micron	-40°C to +95°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	16Gb	512M x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Industrial	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT53E1G32D2FW-046 IT:B Micron	-40°C to +95°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	32Gb	1G x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Industrial	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT53E2G32D4DE-046 AAT:C Micron	-40°C to +105°C	LPDDR4X SDRAM	TFBGA	32-bit	4266MT/s	64Gb	2G x 32	2.133GHz	VDD1: 1.8V, VDD2: 1.1V, VDDQ: 0.6V	10mm x 14.5mm	200	Automotive AEC-Q100 Grade 2	Auto refresh, self refresh, partial array self refresh	16 internal banks (8 banks per channel)	Ultra-low voltage operation, partial array self refresh, temperature-controlled refresh, clock stop mode	1x nm FinFET CMOS	No (On-die ECC not available)	Yes (JESD209-4B)
Micron	MT40A512M16LY-062E:E Micron	-40°C to +95°C	DDR4 SDRAM	FBGA	16-bit	3200MT/s	8Gb	512M x 16	1.6GHz	1.2V (1.14V-1.26V)	7.5mm x 13.5mm	96	Industrial	Auto refresh, self refresh, partial array self refresh	8 internal banks (2 groups of 4 banks)	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), fine granularity refresh	20nm CMOS	No (On-die ECC not available)	Yes (JESD79-4)
Micron	MT41K256M16TW-107 IT:P Micron	-40°C to +95°C	DDR3L SDRAM	FBGA	16-bit	1866MT/s	4Gb	256M x 16	933MHz	1.35V (1.283V-1.45V)	8mm x 14mm	96	Industrial	Auto refresh, self refresh, partial array self refresh	8 internal banks	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), deep power-down mode	40nm CMOS	No (On-die ECC not available)	Yes (JESD79-3)
Micron	MT40A512M16TB-062E Micron	0°C to +95°C	DDR4 SDRAM	FBGA	16-bit	3200MT/s	8Gb	512M x 16	1.6GHz	1.2V (1.14V-1.26V)	7.5mm x 13.5mm	96	Commercial	Auto refresh, self refresh, partial array self refresh	8 internal banks (2 groups of 4 banks)	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), fine granularity refresh	20nm CMOS	No (On-die ECC not available)	Yes (JESD79-4)
Micron	MT40A256M16LY-062E Micron	0°C to +95°C	DDR4 SDRAM	FBGA	16-bit	3200MT/s	4Gb	256M x 16	1.6GHz	1.2V (1.14V-1.26V)	7.5mm x 13.5mm	96	Commercial	Auto refresh, self refresh, partial array self refresh	8 internal banks (2 groups of 4 banks)	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), fine granularity refresh	20nm CMOS	No (On-die ECC not available)	Yes (JESD79-4)
Micron	MT41K128M16JT-125:K Micron	0°C to +95°C	DDR3L SDRAM	FBGA	16-bit	1600MT/s	2Gb	128M x 16	800MHz	1.35V (1.283V-1.45V)	8mm x 14mm	96	Commercial	Auto refresh, self refresh, partial array self refresh	8 internal banks	Low-power auto self-refresh (LPASR), temperature-controlled refresh (TCR), deep power-down mode	40nm CMOS	No (On-die ECC not available)	Yes (JESD79-3)
Micron	MT53E1G32D2FW-046 WT:B Micron	-40°C to +105°C	LPDDR4X	FBGA	x32	4266 MT/s	32Gb	1G × 32	2133 MHz	1.8V / 0.6V	9 × 13 mm	178-ball	Automotive / Industrial	Auto Refresh / Self Refresh	8 Banks	Deep Sleep, Self Refresh	1znm-class DRAM	On-die ECC	LPDDR4X JEDEC
Micron	MT40A1G8SA-062E IT:E Micron	-40°C to +95°C	DDR4 SDRAM	FBGA	x8	3200 MT/s	8Gb	1G × 8	1600 MHz	1.2V	8 × 12.5 mm	78-ball	Industrial	Auto Refresh	16 Banks / 4 Bank Groups	Self Refresh, Power-Down Mode	DRAM Process Technology	No	JEDEC DDR4
Micron	MT53E1G32D2NP-046 WT:B Micron	-40°C to +105°C	LPDDR4X	FBGA	x32	4266 MT/s	32Gb	1G × 32	2133 MHz	1.8V / 0.6V	9 × 13 mm	178-ball	Automotive / Industrial	Auto Refresh / Self Refresh	8 Banks	Deep Sleep Mode, Self Refresh	1znm-class DRAM	On-die ECC	LPDDR4X JEDEC
Micron	MT53E2G32D4DE-046 Micron	-40°C to +95°C	LPDDR4X	FBGA	x32	4266 MT/s	64Gb	2G × 32	2133 MHz	1.8V / 0.6V	10 × 14.5 mm	200-ball	Industrial	Auto Refresh	8 Banks / 4 Bank Groups	Deep Power Down, Self Refresh	1znm-class DRAM	On-die ECC	LPDDR4X JEDEC
Micron	MT62F2G32D4DS-023 Micron	-40°C to +95°C	LPDDR4X	FBGA	x32	4266 MT/s	64Gb	2G × 32	2133 MHz	1.8V / 0.6V	10 × 14.5 mm	200-ball	Industrial	Auto Refresh / Self Refresh	8 Banks / 4 Bank Groups	Deep Sleep, Self Refresh, Partial Array Refresh	1znm-class DRAM	On-die ECC	LPDDR4X JEDEC
Micron	MT40A512M16LY-062E:E Micron	-40°C to +95°C	DDR4 SDRAM	FBGA	x16	3200 MT/s	8Gb	512M × 16	1600 MHz	1.2V	7.5 × 13.5 mm	96-ball	Industrial	Auto Refresh / Self Refresh	16 Banks (4 Bank Groups)	Self Refresh, Power-Down Mode	DRAM Process Technology	No	JEDEC DDR4
Micron	MT41K256M16TW-107-IT:P Micron	-40°C to +95°C	DDR3L SDRAM	FBGA	x16	1866 MT/s	4Gb	256M × 16	933 MHz	1.35V	8 × 14 mm	96-ball	Industrial	Auto Refresh / Self Refresh	8 Banks	Self Refresh, PASR	DRAM Process Technology	No	JEDEC DDR3L

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