MT62F2G32D4DS-023 Micron
Brand:
JEDEC Compliance:
LPDDR4X JEDEC
ECC Support:
On-die ECC
Process Technology:
1znm-class DRAM
Power Saving Features:
Deep Sleep, Self Refresh, Partial Array Refresh
Bank Architecture:
8 Banks / 4 Bank Groups
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Industrial
Pin/Ball Count:
200-ball
Package Size:
10 × 14.5 mm
VDD/VDDQ:
1.8V / 0.6V
Clock Frequency:
2133 MHz
Organization:
2G × 32
Density:
64Gb
Data Rate:
4266 MT/s
I/O Width:
x32
Package Type:
FBGA
Interface Standard:
LPDDR4X
Operating Temperature Range:
-40°C to +95°C
Model:
MT62F2G32D4DS-023
Order Number:
MT62F2G32D4DS-023
Description:
Micron MT62F2G32D4DS-023 is a high-density DDR4 DRAM device engineered for demanding memory applications. It provides high-speed operation, stable signal performance, and efficient power characteristics, suitable for enterprise systems, embedded computing, telecom equipment, and data processing platforms.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Micron | |
| JEDEC Compliance: | LPDDR4X JEDEC | |
| ECC Support: | On-die ECC | |
| Process Technology: | 1znm-class DRAM | |
| Power Saving Features: | Deep Sleep, Self Refresh, Partial Array Refresh | |
| Bank Architecture: | 8 Banks / 4 Bank Groups | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Industrial | |
| Pin/Ball Count: | 200-ball | |
| Package Size: | 10 × 14.5 mm | |
| VDD/VDDQ: | 1.8V / 0.6V | |
| Clock Frequency: | 2133 MHz | |
| Organization: | 2G × 32 | |
| Density: | 64Gb | |
| Data Rate: | 4266 MT/s | |
| I/O Width: | x32 | |
| Package Type: | FBGA | |
| Interface Standard: | LPDDR4X | |
| Operating Temperature Range: | -40°C to +95°C |
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