KLM8G1GEUF-B04P
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| Internal Features: | Wear leveling, bad block management, internal ECC, cache buffer, secure erase | |
| Random Read: | Up to 7K IOPS | |
| Sequential Read: | Read up to 250 MB/s | |
| Storage Capacity: | 8GB | |
| Pin Assignment: | 153-ball FBGA | |
| Package Type: | FBGA | |
| Power Consumption Characteristics: | Low active current, sleep mode support | |
| Speed Mode: | HS200 | |
| Bus Width: | x8 | |
| Interface Standard: | eMMC 5.0 | |
| Operating Temperature Range: | -25°C to +85°C | |
| Operating Voltage: | VCC=2.7–3.6V, VCCQ=1.7–1.95V |

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