KLM8G1GEUF-B04Q
Brand:
Internal Features:
Internal ECC, wear leveling, garbage collection, boot partition support
Random Read:
Up to 8K IOPS
Sequential Read:
Read up to 250 MB/s
Storage Capacity:
8GB
Pin Assignment:
153-ball FBGA
Package Type:
FBGA
Power Consumption Characteristics:
Dynamic power management
Speed Mode:
HS200
Bus Width:
x8
Interface Standard:
eMMC 5.0
Operating Temperature Range:
-25°C to +85°C
Operating Voltage:
VCC=2.7–3.6V, VCCQ=1.7–1.95V
Model:
KLM8G1GEUF-B04Q
Order Number:
KLM8G1GEUF-B04Q
Description:
Samsung eMMC managed NAND storage device optimized for stable high-speed read and write performance, low power consumption, and compact integration in embedded computing, consumer electronics, and industrial automation platforms.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| Internal Features: | Internal ECC, wear leveling, garbage collection, boot partition support | |
| Random Read: | Up to 8K IOPS | |
| Sequential Read: | Read up to 250 MB/s | |
| Storage Capacity: | 8GB | |
| Pin Assignment: | 153-ball FBGA | |
| Package Type: | FBGA | |
| Power Consumption Characteristics: | Dynamic power management | |
| Speed Mode: | HS200 | |
| Bus Width: | x8 | |
| Interface Standard: | eMMC 5.0 | |
| Operating Temperature Range: | -25°C to +85°C | |
| Operating Voltage: | VCC=2.7–3.6V, VCCQ=1.7–1.95V |
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Tom
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