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IKQ100N120CH7 Infineon

Name: IKQ100N120CH7 Infineon
SKU: IKQ100N120CH7

Brand:

Infineon

Operating Junction Temperature (TJ):

175°C

Input Capacitance (Cies):

11800 pF typ

Gate Charge (Qg):

696 nC typ

Switching Speed:

Fast Switching

Collector-Emitter Saturation Voltage (VCE(sat)):

2.0 V typ @ IC=100A

Power Dissipation (PD):

721 W

Gate-Emitter Voltage (VGE):

±20 V

Pulsed Collector Current (IC Pulse):

400 A

Continuous Collector Current (IC):

166 A

Collector-Emitter Voltage (VCE):

1200 V

Transistor Type:

N-Channel IGBT

Mounting Style:

Through Hole

Process Technology:

TRENCHSTOP™ IGBT7

Product Category:

IGBT Discrete

Model:

IKQ100N120CH7

Order Number:

IKQ100N120CH7

Description:

Infineon IKQ100N120CH7 is a 1200V high-speed TRENCHSTOP™ IGBT7 transistor featuring low switching loss, soft recovery diode, low EMI behavior and TO-247PLUS package, optimized for photovoltaic inverters, UPS systems, EV charging and industrial power conversion applications.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Operating Junction Temperature (TJ)：	175°C
Input Capacitance (Cies)：	11800 pF typ
Gate Charge (Qg)：	696 nC typ
Switching Speed：	Fast Switching
Collector-Emitter Saturation Voltage (VCE(sat))：	2.0 V typ @ IC=100A
Power Dissipation (PD)：	721 W
Gate-Emitter Voltage (VGE)：	±20 V
Pulsed Collector Current (IC Pulse)：	400 A
Continuous Collector Current (IC)：	166 A
Collector-Emitter Voltage (VCE)：	1200 V
Transistor Type：	N-Channel IGBT
Mounting Style：	Through Hole
Process Technology：	TRENCHSTOP™ IGBT7
Product Category：	IGBT Discrete

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IKQ100N120CH7 Infineon

Product parameters

Tom

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