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SI3552DV-T1-GE3
Switching Characteristics:
Fast Switching, TrenchFET® MOSFET
Input Capacitance (Ciss):
no information
Gate-Source Voltage (VGS):
±20V
Pulsed Drain Current (ID Pulse):
8A (N-Ch), -7A (P-Ch)
Continuous Drain Current (ID):
2.5A (N-Ch), -1.8A (P-Ch)
Drain-Source Voltage (VDS):
30V / -30V
Operating Junction Temperature (TJ):
-55°C ~ +150°C
Gate Charge (Qg):
2.1nC (N-Ch), 2.4nC (P-Ch)
Power Dissipation (PD):
1.15W
Transistor Type:
N- and P-Channel MOSFET Array
Mounting Style:
Surface Mount
Process Technology:
TrenchFET® Technology
Product Category:
MOSFET Array / Power MOSFET
Package Type:
TSOP-6 / SOT-23-6
Model:
SI3552DV-T1-GE3
Order Number:
SI3552DV-T1-GE3
Description:
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand： | Vishay Semiconductor - Opto Division | |
| Switching Characteristics： | Fast Switching, TrenchFET® MOSFET | |
| Input Capacitance (Ciss)： | no information | |
| Gate-Source Voltage (VGS)： | ±20V | |
| Pulsed Drain Current (ID Pulse)： | 8A (N-Ch), -7A (P-Ch) | |
| Continuous Drain Current (ID)： | 2.5A (N-Ch), -1.8A (P-Ch) | |
| Drain-Source Voltage (VDS)： | 30V / -30V | |
| Operating Junction Temperature (TJ)： | -55°C ~ +150°C | |
| Gate Charge (Qg)： | 2.1nC (N-Ch), 2.4nC (P-Ch) | |
| Power Dissipation (PD)： | 1.15W | |
| Transistor Type： | N- and P-Channel MOSFET Array | |
| Mounting Style： | Surface Mount | |
| Process Technology： | TrenchFET® Technology | |
| Product Category： | MOSFET Array / Power MOSFET | |
| Package Type： | TSOP-6 / SOT-23-6 |
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Tom
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