SI3552DV-T1-GE3
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Vishay Semiconductor - Opto Division | |
| Switching Characteristics: | Fast Switching, TrenchFET® MOSFET | |
| Input Capacitance (Ciss): | no information | |
| Gate-Source Voltage (VGS): | ±20V | |
| Pulsed Drain Current (ID Pulse): | 8A (N-Ch), -7A (P-Ch) | |
| Continuous Drain Current (ID): | 2.5A (N-Ch), -1.8A (P-Ch) | |
| Drain-Source Voltage (VDS): | 30V / -30V | |
| Operating Junction Temperature (TJ): | -55°C ~ +150°C | |
| Gate Charge (Qg): | 2.1nC (N-Ch), 2.4nC (P-Ch) | |
| Power Dissipation (PD): | 1.15W | |
| Transistor Type: | N- and P-Channel MOSFET Array | |
| Mounting Style: | Surface Mount | |
| Process Technology: | TrenchFET® Technology | |
| Product Category: | MOSFET Array / Power MOSFET | |
| Package Type: | TSOP-6 / SOT-23-6 |

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