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IPW65R019C7 Infineon

Name: IPW65R019C7 Infineon
SKU: IPW65R019C7

Brand:

Infineon

Switching Characteristics:

High Speed Switching

Input Capacitance (Ciss):

10200pF

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

306A

Continuous Drain Current (ID):

102A

Drain-Source Voltage (VDS):

650V

Operating Junction Temperature (TJ):

-55°C~150°C

Gate Charge (Qg):

170nC

Power Dissipation (PD):

431W

Transistor Type:

N-Channel MOSFET

Mounting Style:

Through Hole

Process Technology:

CoolMOS™ C7

Product Category:

CoolMOS™ Power MOSFET

Package Type:

TO-247

Model:

IPW65R019C7

Order Number:

IPW65R019C7

Description:

Infineon IPW65R019C7 is a 650V CoolMOS™ C7 superjunction MOSFET offering ultra-low resistance, exceptional switching efficiency and reduced energy loss, targeted at server power supplies, telecom rectifiers, solar inverters and high-performance industrial SMPS applications.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	High Speed Switching
Input Capacitance (Ciss)：	10200pF
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	306A
Continuous Drain Current (ID)：	102A
Drain-Source Voltage (VDS)：	650V
Operating Junction Temperature (TJ)：	-55°C~150°C
Gate Charge (Qg)：	170nC
Power Dissipation (PD)：	431W
Transistor Type：	N-Channel MOSFET
Mounting Style：	Through Hole
Process Technology：	CoolMOS™ C7
Product Category：	CoolMOS™ Power MOSFET
Package Type：	TO-247

Products with the same attribute : 0

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