IPC90N04S5-3R6 Infineon
Brand:
Switching Characteristics:
Fast Switching
Input Capacitance (Ciss):
3900pF
Gate-Source Voltage (VGS):
±20V
Pulsed Drain Current (ID Pulse):
360A
Continuous Drain Current (ID):
90A
Drain-Source Voltage (VDS):
40V
Operating Junction Temperature (TJ):
-55°C~175°C
Gate Charge (Qg):
36nC
Power Dissipation (PD):
94W
Transistor Type:
N-Channel MOSFET
Mounting Style:
Through Hole
Process Technology:
OptiMOS™ 5
Product Category:
Power MOSFET
Package Type:
TO-220
Model:
IPC90N04S5-3R6
Order Number:
IPC90N04S5-3R6
Description:
Infineon IPC90N04S5-3R6 is a 40V OptiMOS™ 5 power MOSFET engineered for low voltage high-current applications, delivering minimized gate charge, low RDS(on) and excellent switching behavior for DC-DC converters, VRM modules and automotive power distribution systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Switching Characteristics: | Fast Switching | |
| Input Capacitance (Ciss): | 3900pF | |
| Gate-Source Voltage (VGS): | ±20V | |
| Pulsed Drain Current (ID Pulse): | 360A | |
| Continuous Drain Current (ID): | 90A | |
| Drain-Source Voltage (VDS): | 40V | |
| Operating Junction Temperature (TJ): | -55°C~175°C | |
| Gate Charge (Qg): | 36nC | |
| Power Dissipation (PD): | 94W | |
| Transistor Type: | N-Channel MOSFET | |
| Mounting Style: | Through Hole | |
| Process Technology: | OptiMOS™ 5 | |
| Product Category: | Power MOSFET | |
| Package Type: | TO-220 |
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