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IPD050N10N5 Infineon

Name: IPD050N10N5 Infineon
SKU: IPD050N10N5

Brand:

Infineon

Switching Characteristics:

Fast Switching

Input Capacitance (Ciss):

6400pF

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

400A

Continuous Drain Current (ID):

100A

Drain-Source Voltage (VDS):

100V

Operating Junction Temperature (TJ):

-55°C~175°C

Gate Charge (Qg):

78nC

Power Dissipation (PD):

179W

Transistor Type:

N-Channel MOSFET

Mounting Style:

Surface Mount

Process Technology:

OptiMOS™ 5

Product Category:

Power MOSFET

Package Type:

TO-252 / DPAK

Model:

IPD050N10N5

Order Number:

IPD050N10N5

Description:

Infineon IPD050N10N5 is a 100V OptiMOS™ 5 MOSFET featuring low switching losses, reduced thermal resistance and strong avalanche ruggedness, designed for industrial motor control, synchronous rectification, battery protection and high-efficiency power supply applications.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	Fast Switching
Input Capacitance (Ciss)：	6400pF
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	400A
Continuous Drain Current (ID)：	100A
Drain-Source Voltage (VDS)：	100V
Operating Junction Temperature (TJ)：	-55°C~175°C
Gate Charge (Qg)：	78nC
Power Dissipation (PD)：	179W
Transistor Type：	N-Channel MOSFET
Mounting Style：	Surface Mount
Process Technology：	OptiMOS™ 5
Product Category：	Power MOSFET
Package Type：	TO-252 / DPAK

Products with the same attribute : 0

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IPD050N10N5 Infineon

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