IPW65R110CFDA Infineon
Brand:
Switching Characteristics:
Fast Switching
Input Capacitance (Ciss):
1350pF
Gate-Source Voltage (VGS):
±20V
Pulsed Drain Current (ID Pulse):
93A
Continuous Drain Current (ID):
31A
Drain-Source Voltage (VDS):
650V
Operating Junction Temperature (TJ):
-55°C~150°C
Gate Charge (Qg):
36nC
Power Dissipation (PD):
208W
Transistor Type:
N-Channel MOSFET
Mounting Style:
Through Hole
Process Technology:
CoolMOS™ CFD7A
Product Category:
CoolMOS™ Power MOSFET
Package Type:
TO-247
Model:
IPW65R110CFDA
Order Number:
IPW65R110CFDA
Description:
Infineon IPW65R110CFDA is a 650V CoolMOS™ CFD7 MOSFET integrating optimized body diode characteristics, fast recovery behavior and low switching losses, making it suitable for PFC circuits, resonant converters, industrial power supplies and energy-efficient switching systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Switching Characteristics: | Fast Switching | |
| Input Capacitance (Ciss): | 1350pF | |
| Gate-Source Voltage (VGS): | ±20V | |
| Pulsed Drain Current (ID Pulse): | 93A | |
| Continuous Drain Current (ID): | 31A | |
| Drain-Source Voltage (VDS): | 650V | |
| Operating Junction Temperature (TJ): | -55°C~150°C | |
| Gate Charge (Qg): | 36nC | |
| Power Dissipation (PD): | 208W | |
| Transistor Type: | N-Channel MOSFET | |
| Mounting Style: | Through Hole | |
| Process Technology: | CoolMOS™ CFD7A | |
| Product Category: | CoolMOS™ Power MOSFET | |
| Package Type: | TO-247 |
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