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IPD12CN10NG Infineon

Name: IPD12CN10NG Infineon
SKU: IPD12CN10NG

Brand:

Infineon

Switching Characteristics:

Fast Switching

Input Capacitance (Ciss):

3000pF

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

228A

Continuous Drain Current (ID):

57A

Drain-Source Voltage (VDS):

100V

Operating Junction Temperature (TJ):

-55°C~175°C

Gate Charge (Qg):

44nC

Power Dissipation (PD):

208W

Transistor Type:

N-Channel MOSFET

Mounting Style:

Surface Mount

Process Technology:

OptiMOS™

Product Category:

Power MOSFET

Package Type:

TO-252 / DPAK

Model:

IPD12CN10NG

Order Number:

IPD12CN10NG

Description:

Infineon IPD12CN10NG is a 100V N-channel power MOSFET optimized for high-frequency switching applications, combining low on-resistance, compact package design and robust reliability for industrial automation, telecom infrastructure and efficient DC-DC conversion systems.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	Fast Switching
Input Capacitance (Ciss)：	3000pF
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	228A
Continuous Drain Current (ID)：	57A
Drain-Source Voltage (VDS)：	100V
Operating Junction Temperature (TJ)：	-55°C~175°C
Gate Charge (Qg)：	44nC
Power Dissipation (PD)：	208W
Transistor Type：	N-Channel MOSFET
Mounting Style：	Surface Mount
Process Technology：	OptiMOS™
Product Category：	Power MOSFET
Package Type：	TO-252 / DPAK

Products with the same attribute : 0

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