IPD12CN10NG Infineon
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Infineon | |
| Switching Characteristics: | Fast Switching | |
| Input Capacitance (Ciss): | 3000pF | |
| Gate-Source Voltage (VGS): | ±20V | |
| Pulsed Drain Current (ID Pulse): | 228A | |
| Continuous Drain Current (ID): | 57A | |
| Drain-Source Voltage (VDS): | 100V | |
| Operating Junction Temperature (TJ): | -55°C~175°C | |
| Gate Charge (Qg): | 44nC | |
| Power Dissipation (PD): | 208W | |
| Transistor Type: | N-Channel MOSFET | |
| Mounting Style: | Surface Mount | |
| Process Technology: | OptiMOS™ | |
| Product Category: | Power MOSFET | |
| Package Type: | TO-252 / DPAK |

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