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IRF100P219

Name: IRF100P219
SKU: IRF100P219

Brand:

Infineon

Switching Characteristics:

Fast Switching

Input Capacitance (Ciss):

12200pF Typ

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

840A

Continuous Drain Current (ID):

160A

Drain-Source Voltage (VDS):

100V

Operating Junction Temperature (TJ):

-55°C ~ +175°C

Gate Charge (Qg):

230nC Typ

Power Dissipation (PD):

375W

Transistor Type:

N-Channel Power MOSFET

Mounting Style:

Through Hole

Process Technology:

HEXFET® Power MOSFET Technology

Product Category:

Power MOSFET

Package Type:

TO-247AC

Model:

IRF100P219

Order Number:

IRF100P219

Description:

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	Fast Switching
Input Capacitance (Ciss)：	12200pF Typ
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	840A
Continuous Drain Current (ID)：	160A
Drain-Source Voltage (VDS)：	100V
Operating Junction Temperature (TJ)：	-55°C ~ +175°C
Gate Charge (Qg)：	230nC Typ
Power Dissipation (PD)：	375W
Transistor Type：	N-Channel Power MOSFET
Mounting Style：	Through Hole
Process Technology：	HEXFET® Power MOSFET Technology
Product Category：	Power MOSFET
Package Type：	TO-247AC

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Tom

Hi, I'm Tom. With 7 years of experience in the industrial control industry, I combine deep professionalism with a friendly, client-first approach. I am dedicated to providing complete, end-to-end services to support your business needs. Let’s collaborate to achieve your goals—please feel free to contact me today!

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