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BSC096N10LS5 Infineon

Name: BSC096N10LS5 Infineon
SKU: BSC096N10LS5

Brand:

Infineon

Switching Characteristics:

Fast Switching

Input Capacitance (Ciss):

3400pF

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

320A

Continuous Drain Current (ID):

80A

Drain-Source Voltage (VDS):

100V

Operating Junction Temperature (TJ):

-55°C~175°C

Gate Charge (Qg):

38nC

Power Dissipation (PD):

104W

Transistor Type:

N-Channel MOSFET

Mounting Style:

Surface Mount

Process Technology:

OptiMOS™ 5

Product Category:

Power MOSFET

Package Type:

PG-TDSON-8

Model:

BSC096N10LS5

Order Number:

BSC096N10LS5

Description:

Infineon BSC096N10LS5 is a 100V OptiMOS™ 5 N-channel power MOSFET featuring low RDS(on), excellent switching efficiency and reduced conduction losses, optimized for synchronous rectification, telecom power systems, industrial DC-DC converters and high-current switching applications.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	Fast Switching
Input Capacitance (Ciss)：	3400pF
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	320A
Continuous Drain Current (ID)：	80A
Drain-Source Voltage (VDS)：	100V
Operating Junction Temperature (TJ)：	-55°C~175°C
Gate Charge (Qg)：	38nC
Power Dissipation (PD)：	104W
Transistor Type：	N-Channel MOSFET
Mounting Style：	Surface Mount
Process Technology：	OptiMOS™ 5
Product Category：	Power MOSFET
Package Type：	PG-TDSON-8

Products with the same attribute : 0

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