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IPB020N08N5 Infineon

Name: IPB020N08N5 Infineon
SKU: IPB020N08N5

Brand:

Infineon

Switching Characteristics:

Fast Switching

Input Capacitance (Ciss):

11800pF

Gate-Source Voltage (VGS):

±20V

Pulsed Drain Current (ID Pulse):

720A

Continuous Drain Current (ID):

180A

Drain-Source Voltage (VDS):

80V

Operating Junction Temperature (TJ):

-55°C~175°C

Gate Charge (Qg):

155nC

Power Dissipation (PD):

375W

Transistor Type:

N-Channel MOSFET

Mounting Style:

Through Hole

Process Technology:

OptiMOS™ 5

Product Category:

Power MOSFET

Package Type:

TO-263 / D2PAK

Model:

IPB020N08N5

Order Number:

IPB020N08N5

Description:

Infineon IPB020N08N5 is an 80V OptiMOS™ 5 MOSFET providing very low conduction losses, high current capability and fast switching operation, suitable for motor drives, synchronous rectifiers, battery-powered tools and industrial power management circuits requiring high efficiency.

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Product parameters

Product parameters

Product attributes	Attribute value	Filter product attributes
Brand：	Infineon
Switching Characteristics：	Fast Switching
Input Capacitance (Ciss)：	11800pF
Gate-Source Voltage (VGS)：	±20V
Pulsed Drain Current (ID Pulse)：	720A
Continuous Drain Current (ID)：	180A
Drain-Source Voltage (VDS)：	80V
Operating Junction Temperature (TJ)：	-55°C~175°C
Gate Charge (Qg)：	155nC
Power Dissipation (PD)：	375W
Transistor Type：	N-Channel MOSFET
Mounting Style：	Through Hole
Process Technology：	OptiMOS™ 5
Product Category：	Power MOSFET
Package Type：	TO-263 / D2PAK

Products with the same attribute : 0

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IPB020N08N5 Infineon

Product parameters

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