K4B4G1646E-BCNB Samsung
Brand:
JEDEC Compliance:
JEDEC DDR3 compliant
ECC Support:
No
Process Technology:
30nm-class DRAM process
Power Saving Features:
Power-Down Mode, Self Refresh, Deep Power Saving
Bank Architecture:
8 Banks
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial
Pin/Ball Count:
96 balls
Package Size:
96-ball FBGA
VDD/VDDQ:
VDD=1.5V ±0.075V / VDDQ=1.5V ±0.075V
Clock Frequency:
933 MHz
Organization:
256M x16
Density:
4Gb
Data Rate:
1866 Mbps
I/O Width:
x16
Package Type:
FBGA
Interface Standard:
DDR3 SDRAM
Operating Temperature Range:
0°C to +85°C
Model:
K4B4G1646E-BCNB
Order Number:
K4B4G1646E-BCNB
Description:
Samsung 4Gb DDR3 SDRAM device featuring x16 organization, high-speed data transfer capability, low operating voltage, and optimized signal integrity for embedded computing, industrial control, networking equipment, and consumer electronics requiring reliable volatile memory performance.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC DDR3 compliant | |
| ECC Support: | No | |
| Process Technology: | 30nm-class DRAM process | |
| Power Saving Features: | Power-Down Mode, Self Refresh, Deep Power Saving | |
| Bank Architecture: | 8 Banks | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial | |
| Pin/Ball Count: | 96 balls | |
| Package Size: | 96-ball FBGA | |
| VDD/VDDQ: | VDD=1.5V ±0.075V / VDDQ=1.5V ±0.075V | |
| Clock Frequency: | 933 MHz | |
| Organization: | 256M x16 | |
| Density: | 4Gb | |
| Data Rate: | 1866 Mbps | |
| I/O Width: | x16 | |
| Package Type: | FBGA | |
| Interface Standard: | DDR3 SDRAM | |
| Operating Temperature Range: | 0°C to +85°C |
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