K4ABG165WA-MCWE Samsung
Brand:
JEDEC Compliance:
JEDEC DDR5 compliant
ECC Support:
On-die ECC
Process Technology:
Samsung advanced DRAM node
Power Saving Features:
Power-Down, Self Refresh, DFE
Bank Architecture:
32 Banks / 8 Bank Groups
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
96 balls
Package Size:
96-ball FBGA
VDD/VDDQ:
1.1V / 1.1V
Clock Frequency:
3200 MHz
Organization:
1G ×16
Density:
16Gb
Data Rate:
6400 Mbps
I/O Width:
x16
Package Type:
FBGA
Interface Standard:
DDR5 SDRAM
Operating Temperature Range:
0°C to +85°C
Model:
K4ABG165WA-MCWE
Order Number:
K4ABG165WA-MCWE
Description:
Samsung DDR4 SDRAM optimized for high-capacity memory applications, delivering low power consumption, fast transfer rates, and strong reliability for enterprise storage and embedded processing systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC DDR5 compliant | |
| ECC Support: | On-die ECC | |
| Process Technology: | Samsung advanced DRAM node | |
| Power Saving Features: | Power-Down, Self Refresh, DFE | |
| Bank Architecture: | 32 Banks / 8 Bank Groups | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 96 balls | |
| Package Size: | 96-ball FBGA | |
| VDD/VDDQ: | 1.1V / 1.1V | |
| Clock Frequency: | 3200 MHz | |
| Organization: | 1G ×16 | |
| Density: | 16Gb | |
| Data Rate: | 6400 Mbps | |
| I/O Width: | x16 | |
| Package Type: | FBGA | |
| Interface Standard: | DDR5 SDRAM | |
| Operating Temperature Range: | 0°C to +85°C |
Products with the same attribute : 0
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