K4A4G165WG-BCWE Samsung
Brand:
JEDEC Compliance:
JEDEC DDR4 compliant
ECC Support:
No
Process Technology:
Samsung 10nm-class DRAM process (E-die generation)
Power Saving Features:
Power-Down Mode, Self Refresh, DLL-off Mode
Bank Architecture:
16 Banks / 4 Bank Groups
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
96-ball
Package Size:
9 × 8 × 1.2 mm
VDD/VDDQ:
1.2V / 1.2V
Clock Frequency:
1600 MHz
Organization:
256M ×16
Density:
4Gb
Data Rate:
3200 Mbps
I/O Width:
x16
Package Type:
FBGA
Interface Standard:
DDR4 SDRAM
Operating Temperature Range:
0°C to +85°C
Model:
K4A4G165WG-BCWE
Order Number:
K4A4G165WG-BCWE
Description:
Samsung 4Gb DDR4 SDRAM with x16 architecture, supporting high bandwidth, improved power efficiency, and advanced reliability features for servers, industrial systems, telecom platforms, and high-performance embedded applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC DDR4 compliant | |
| ECC Support: | No | |
| Process Technology: | Samsung 10nm-class DRAM process (E-die generation) | |
| Power Saving Features: | Power-Down Mode, Self Refresh, DLL-off Mode | |
| Bank Architecture: | 16 Banks / 4 Bank Groups | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 96-ball | |
| Package Size: | 9 × 8 × 1.2 mm | |
| VDD/VDDQ: | 1.2V / 1.2V | |
| Clock Frequency: | 1600 MHz | |
| Organization: | 256M ×16 | |
| Density: | 4Gb | |
| Data Rate: | 3200 Mbps | |
| I/O Width: | x16 | |
| Package Type: | FBGA | |
| Interface Standard: | DDR4 SDRAM | |
| Operating Temperature Range: | 0°C to +85°C |
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