H26M64208EMR SK Hynix
Brand:
Internal Features:
Internal ECC, wear leveling, secure erase, cache management
Random Read:
Up to 8K IOPS
Sequential Read:
Up to 200 MB/s
Storage Capacity:
8GB
Pin Assignment:
169-ball FBGA
Power Consumption Characteristics:
Dynamic power management
Speed Mode:
HS200
Bus Width:
x8
Interface Standard:
eMMC 4.5
Operating Temperature Range:
-25°C to +85°C
Operating Voltage:
VCC: 2.7–3.6V, VCCQ: 1.8V
Model:
H26M64208EMR
Order Number:
H26M64208EMR
Description:
SK hynix eMMC managed NAND flash memory component optimized for stable high-speed data access, advanced error correction capability, and dependable endurance performance in embedded computing, networking equipment, and consumer electronic platforms.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | SK Hynix | |
| Internal Features: | Internal ECC, wear leveling, secure erase, cache management | |
| Random Read: | Up to 8K IOPS | |
| Sequential Read: | Up to 200 MB/s | |
| Storage Capacity: | 8GB | |
| Pin Assignment: | 169-ball FBGA | |
| Power Consumption Characteristics: | Dynamic power management | |
| Speed Mode: | HS200 | |
| Bus Width: | x8 | |
| Interface Standard: | eMMC 4.5 | |
| Operating Temperature Range: | -25°C to +85°C | |
| Operating Voltage: | VCC: 2.7–3.6V, VCCQ: 1.8V |
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