TC58NVG2S0HBAI6 Kioxia
Brand:
ECC Requirement:
8-bit ECC / 512B
Erase Time:
3 ms typ.
Program Time:
300 µs/page typ.
Spare Area Size:
224 Bytes
Block Size:
256KB + spare
Page Size:
4096 + 224 Bytes
NAND Architecture:
SLC NAND
Read Access Time:
25 µs
Storage Capacity:
4Gb
Package Type:
63-ball VFBGA
Bus Width:
x8
Interface Standard:
ONFI NAND
Interface Type:
Parallel NAND
Operating Temperature Range:
-40°C to +85°C
Operating Voltage:
2.7V–3.6V
Model:
TC58NVG2S0HBAI6
Order Number:
TC58NVG2S0HBAI6
Description:
Kioxia high-capacity NAND flash memory component featuring efficient storage density, stable non-volatile performance, and optimized power consumption for multimedia devices, networking hardware, and embedded computing applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Kioxia | |
| ECC Requirement: | 8-bit ECC / 512B | |
| Erase Time: | 3 ms typ. | |
| Program Time: | 300 µs/page typ. | |
| Spare Area Size: | 224 Bytes | |
| Block Size: | 256KB + spare | |
| Page Size: | 4096 + 224 Bytes | |
| NAND Architecture: | SLC NAND | |
| Read Access Time: | 25 µs | |
| Storage Capacity: | 4Gb | |
| Package Type: | 63-ball VFBGA | |
| Bus Width: | x8 | |
| Interface Standard: | ONFI NAND | |
| Interface Type: | Parallel NAND | |
| Operating Temperature Range: | -40°C to +85°C | |
| Operating Voltage: | 2.7V–3.6V |
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Tom
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