MT53E512M32D1ZW-046 Micron
Brand:
JEDEC Compliance:
JEDEC LPDDR4X compliant
ECC Support:
Inline ECC supported
Process Technology:
1Z nm mobile DRAM
Power Saving Features:
DVFS, Deep Sleep, Self Refresh
Bank Architecture:
Multi-bank LPDDR4X architecture
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
200 balls
Package Size:
200-ball FBGA
VDD/VDDQ:
VDD1=1.8V / VDD2=1.1V / VDDQ=0.6V
Clock Frequency:
2133 MHz
Organization:
512M ×32
Density:
16Gb
Data Rate:
4266 MT/s
I/O Width:
x32
Package Type:
FBGA
Interface Standard:
LPDDR4X SDRAM
Operating Temperature Range:
-25°C to +85°C
Model:
Order Number:
MT53E512M32D1ZW-046
Description:
Micron LPDDR4X SDRAM providing high bandwidth, low operating voltage, and advanced package integration for mobile devices, automotive electronics, and edge computing applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Micron | |
| JEDEC Compliance: | JEDEC LPDDR4X compliant | |
| ECC Support: | Inline ECC supported | |
| Process Technology: | 1Z nm mobile DRAM | |
| Power Saving Features: | DVFS, Deep Sleep, Self Refresh | |
| Bank Architecture: | Multi-bank LPDDR4X architecture | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 200 balls | |
| Package Size: | 200-ball FBGA | |
| VDD/VDDQ: | VDD1=1.8V / VDD2=1.1V / VDDQ=0.6V | |
| Clock Frequency: | 2133 MHz | |
| Organization: | 512M ×32 | |
| Density: | 16Gb | |
| Data Rate: | 4266 MT/s | |
| I/O Width: | x32 | |
| Package Type: | FBGA | |
| Interface Standard: | LPDDR4X SDRAM | |
| Operating Temperature Range: | -25°C to +85°C |
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