K4B2G1646F-BYMA Samsung
Brand:
JEDEC Compliance:
JEDEC DDR3 compliant
ECC Support:
No
Process Technology:
20nm-class DRAM
Power Saving Features:
Power-Down, Self Refresh, DLL-off
Bank Architecture:
8 Banks
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
96 balls
Package Size:
96-ball FBGA
VDD/VDDQ:
1.5V / 1.5V
Clock Frequency:
1066 MHz
Organization:
128M ×16
Density:
2Gb
Data Rate:
2133 Mbps
I/O Width:
x16
Package Type:
FBGA
Interface Standard:
DDR3 SDRAM
Operating Temperature Range:
0°C to +85°C
Model:
K4B2G1646F-BYMA
Order Number:
K4B2G1646F-BYMA
Description:
Samsung DDR3 SDRAM component designed for efficient memory performance, reduced power requirements, and stable operation in consumer electronics, industrial controllers, and compact computing systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC DDR3 compliant | |
| ECC Support: | No | |
| Process Technology: | 20nm-class DRAM | |
| Power Saving Features: | Power-Down, Self Refresh, DLL-off | |
| Bank Architecture: | 8 Banks | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 96 balls | |
| Package Size: | 96-ball FBGA | |
| VDD/VDDQ: | 1.5V / 1.5V | |
| Clock Frequency: | 1066 MHz | |
| Organization: | 128M ×16 | |
| Density: | 2Gb | |
| Data Rate: | 2133 Mbps | |
| I/O Width: | x16 | |
| Package Type: | FBGA | |
| Interface Standard: | DDR3 SDRAM | |
| Operating Temperature Range: | 0°C to +85°C |
Products with the same attribute : 0
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