KMDX60018M-B425 Samsung
Brand:
JEDEC Compliance:
JEDEC Mobile DDR compliant
ECC Support:
No
Process Technology:
Mobile DRAM process
Power Saving Features:
Partial Array Self Refresh (PASR), Deep Power Down
Bank Architecture:
4 Banks
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
90-ball class
Package Size:
Mobile FBGA
VDD/VDDQ:
1.8V
Clock Frequency:
200 MHz
Organization:
32M ×16
Density:
512Mb
Data Rate:
400 Mbps
I/O Width:
x16
Package Type:
FBGA
Interface Standard:
Mobile DDR SDRAM
Operating Temperature Range:
-25°C to +85°C
Model:
KMDX60018M-B425
Order Number:
KMDX60018M-B425
Description:
Samsung multi-chip memory package integrating advanced DRAM technology with compact package design, optimized power management, and reliable high-speed performance for embedded, mobile, and industrial computing applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC Mobile DDR compliant | |
| ECC Support: | No | |
| Process Technology: | Mobile DRAM process | |
| Power Saving Features: | Partial Array Self Refresh (PASR), Deep Power Down | |
| Bank Architecture: | 4 Banks | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 90-ball class | |
| Package Size: | Mobile FBGA | |
| VDD/VDDQ: | 1.8V | |
| Clock Frequency: | 200 MHz | |
| Organization: | 32M ×16 | |
| Density: | 512Mb | |
| Data Rate: | 400 Mbps | |
| I/O Width: | x16 | |
| Package Type: | FBGA | |
| Interface Standard: | Mobile DDR SDRAM | |
| Operating Temperature Range: | -25°C to +85°C |
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