K4U6E3S4AB-KHCL Samsung
Brand:
JEDEC Compliance:
JEDEC LPDDR4X compliant
ECC Support:
No
Process Technology:
Samsung mobile DRAM process
Power Saving Features:
DVFS, Deep Sleep, Self Refresh
Bank Architecture:
Multi-bank LPDDR4X architecture
Refresh Mode:
Auto Refresh / Self Refresh
Temperature Grade:
Commercial Grade
Pin/Ball Count:
200-ball class
Package Size:
Mobile FBGA
VDD/VDDQ:
VDD1=1.1V / VDDQ=0.6V
Clock Frequency:
1866 MHz
Organization:
768M ×8
Density:
6Gb
Data Rate:
3733 Mbps
I/O Width:
x8
Package Type:
FBGA
Interface Standard:
LPDDR4X SDRAM
Operating Temperature Range:
-25°C to +85°C
Model:
K4U6E3S4AB-KHCL
Order Number:
K4U6E3S4AB-KHCL
Description:
Samsung high-performance low-power DRAM delivering reliable bandwidth, advanced energy efficiency, and compact packaging for modern mobile computing and multimedia processing applications.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| JEDEC Compliance: | JEDEC LPDDR4X compliant | |
| ECC Support: | No | |
| Process Technology: | Samsung mobile DRAM process | |
| Power Saving Features: | DVFS, Deep Sleep, Self Refresh | |
| Bank Architecture: | Multi-bank LPDDR4X architecture | |
| Refresh Mode: | Auto Refresh / Self Refresh | |
| Temperature Grade: | Commercial Grade | |
| Pin/Ball Count: | 200-ball class | |
| Package Size: | Mobile FBGA | |
| VDD/VDDQ: | VDD1=1.1V / VDDQ=0.6V | |
| Clock Frequency: | 1866 MHz | |
| Organization: | 768M ×8 | |
| Density: | 6Gb | |
| Data Rate: | 3733 Mbps | |
| I/O Width: | x8 | |
| Package Type: | FBGA | |
| Interface Standard: | LPDDR4X SDRAM | |
| Operating Temperature Range: | -25°C to +85°C |
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