H58G56BK8QX068N SK Hynix
Brand:
ECC Requirement:
On-die ECC
Erase Time:
N/A
Program Time:
N/A
Spare Area Size:
N/A
Block Size:
N/A
Page Size:
N/A
NAND Architecture:
LPDDR5X DRAM
Read Access Time:
Up to 8533Mbps
Storage Capacity:
32Gb
Package Type:
FBGA
Bus Width:
x16
Interface Standard:
LPDDR5X
Interface Type:
Mobile DRAM
Operating Temperature Range:
-25°C to 85°C
Operating Voltage:
1.05V / 0.5V
Model:
H58G56BK8QX068N
Order Number:
H58G56BK8QX068N
Description:
SK hynix H58G56BK8QX068N is a 32Gbit LPDDR5/LPDDR5X mobile DRAM memory component designed for high-performance smartphones, AI edge devices and mobile computing applications, providing high bandwidth, low power consumption and advanced signal integrity for next-generation embedded systems.
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | SK Hynix | |
| ECC Requirement: | On-die ECC | |
| Erase Time: | N/A | |
| Program Time: | N/A | |
| Spare Area Size: | N/A | |
| Block Size: | N/A | |
| Page Size: | N/A | |
| NAND Architecture: | LPDDR5X DRAM | |
| Read Access Time: | Up to 8533Mbps | |
| Storage Capacity: | 32Gb | |
| Package Type: | FBGA | |
| Bus Width: | x16 | |
| Interface Standard: | LPDDR5X | |
| Interface Type: | Mobile DRAM | |
| Operating Temperature Range: | -25°C to 85°C | |
| Operating Voltage: | 1.05V / 0.5V |
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Tom
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