MZVLB1T0HBLR-00000
Brand:
Random Write IOPS:
Up to 560K IOPS
Random Read IOPS:
Up to 620K IOPS
Sequential Write Speed:
Up to 3000 MB/s
Sequential Read Speed:
Up to 3500 MB/s
NAND Flash Type:
Samsung V-NAND TLC
Protocol:
NVMe 1.3
Form Factor:
M.2 2280
Product Category:
NVMe Solid State Drive
Storage Capacity:
1 TB
Package Type:
M.2
Controller Type:
Samsung Phoenix Controller
Interface Type:
PCIe Gen3 x4
Operating Temperature Range:
0C to +70C
Operating Voltage:
3.3V
Model:
MZVLB1T0HBLR-00000
Order Number:
MZVLB1T0HBLR-00000
Description:
Product parameters
| Product attributes | Attribute value | Filter product attributes |
|---|---|---|
| Brand: | Samsung Semiconductor | |
| Random Write IOPS: | Up to 560K IOPS | |
| Random Read IOPS: | Up to 620K IOPS | |
| Sequential Write Speed: | Up to 3000 MB/s | |
| Sequential Read Speed: | Up to 3500 MB/s | |
| NAND Flash Type: | Samsung V-NAND TLC | |
| Protocol: | NVMe 1.3 | |
| Form Factor: | M.2 2280 | |
| Product Category: | NVMe Solid State Drive | |
| Storage Capacity: | 1 TB | |
| Package Type: | M.2 | |
| Controller Type: | Samsung Phoenix Controller | |
| Interface Type: | PCIe Gen3 x4 | |
| Operating Temperature Range: | 0C to +70C | |
| Operating Voltage: | 3.3V |
Products with the same attribute : 0
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Tom
Hi, I'm Tom. With 7 years of experience in the industrial control industry, I combine deep professionalism with a friendly, client-first approach. I am dedicated to providing complete, end-to-end services to support your business needs. Let’s collaborate to achieve your goals—please feel free to contact me today!





























































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